Research progress of semiconductive shielding layer of HVDC cable
As an indispensable part of high-voltage direct current (HVDC) cable, the semiconductive shielding layer plays the role of uniforming electric field in the cable. However, cable shielding materials >35 kV mainly rely on foreign imports in China, which belongs to the technical weak issues in the f...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2019-11-01
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| Series: | High Voltage |
| Subjects: | |
| Online Access: | https://digital-library.theiet.org/content/journals/10.1049/hve.2019.0069 |
| _version_ | 1818614177413988352 |
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| author | Yanhui Wei Wang Han Guochang Li Qingquan Lei Mingli Fu Chuncheng Hao Guanjun Zhang |
| author_facet | Yanhui Wei Wang Han Guochang Li Qingquan Lei Mingli Fu Chuncheng Hao Guanjun Zhang |
| author_sort | Yanhui Wei |
| collection | DOAJ |
| description | As an indispensable part of high-voltage direct current (HVDC) cable, the semiconductive shielding layer plays the role of uniforming electric field in the cable. However, cable shielding materials >35 kV mainly rely on foreign imports in China, which belongs to the technical weak issues in the field of electrical materials. At present, there are few systematic reports on semiconductive shielding material of HVDC cable. In the work, the mechanisms of charge conduction and thermal conduction of semiconductive material have been introduced. Effect of raw material, carbon black content and the second conductive filler on the resistance characteristics of the semiconductive layer, the charge accumulation characteristics of the insulating layer and the interface characteristics have been studied. A kind of semiconductive layer as a high voltage terminal charge emission method has been proposed to study charge emission from the semiconducting layer to the insulation layer. This work can provide theoretical guidance for the research of semiconductive shielding materials. |
| first_indexed | 2024-12-16T16:13:52Z |
| format | Article |
| id | doaj.art-e83be6cd1f6849cbbd3f021574b44967 |
| institution | Directory Open Access Journal |
| issn | 2397-7264 |
| language | English |
| last_indexed | 2024-12-16T16:13:52Z |
| publishDate | 2019-11-01 |
| publisher | Wiley |
| record_format | Article |
| series | High Voltage |
| spelling | doaj.art-e83be6cd1f6849cbbd3f021574b449672022-12-21T22:25:09ZengWileyHigh Voltage2397-72642019-11-0110.1049/hve.2019.0069HVE.2019.0069Research progress of semiconductive shielding layer of HVDC cableYanhui Wei0Wang Han1Guochang Li2Qingquan Lei3Mingli Fu4Chuncheng Hao5Guanjun Zhang6Institute of Advanced Electrical Materials, Qingdao University of Science and TechnologyInstitute of Advanced Electrical Materials, Qingdao University of Science and TechnologyInstitute of Advanced Electrical Materials, Qingdao University of Science and TechnologyInstitute of Advanced Electrical Materials, Qingdao University of Science and TechnologyChina South Power Grid International Co., LtdInstitute of Advanced Electrical Materials, Qingdao University of Science and TechnologyState Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong UniversityAs an indispensable part of high-voltage direct current (HVDC) cable, the semiconductive shielding layer plays the role of uniforming electric field in the cable. However, cable shielding materials >35 kV mainly rely on foreign imports in China, which belongs to the technical weak issues in the field of electrical materials. At present, there are few systematic reports on semiconductive shielding material of HVDC cable. In the work, the mechanisms of charge conduction and thermal conduction of semiconductive material have been introduced. Effect of raw material, carbon black content and the second conductive filler on the resistance characteristics of the semiconductive layer, the charge accumulation characteristics of the insulating layer and the interface characteristics have been studied. A kind of semiconductive layer as a high voltage terminal charge emission method has been proposed to study charge emission from the semiconducting layer to the insulation layer. This work can provide theoretical guidance for the research of semiconductive shielding materials.https://digital-library.theiet.org/content/journals/10.1049/hve.2019.0069thermal conductivitycable shieldingcarbonpower cableshvdc power transmissionelectric fieldssemiconductor materialshigh-voltage direct current cableelectric fieldcable shielding materialselectrical materialshvdc cablecharge conductionthermal conductioncarbon black contentcharge accumulation characteristicsinsulating layerhigh voltage terminal charge emission methodinsulation layersemiconductive shielding layer materialchinasecond conductive fillerinterface characteristicsvoltage 35.0 kvc |
| spellingShingle | Yanhui Wei Wang Han Guochang Li Qingquan Lei Mingli Fu Chuncheng Hao Guanjun Zhang Research progress of semiconductive shielding layer of HVDC cable High Voltage thermal conductivity cable shielding carbon power cables hvdc power transmission electric fields semiconductor materials high-voltage direct current cable electric field cable shielding materials electrical materials hvdc cable charge conduction thermal conduction carbon black content charge accumulation characteristics insulating layer high voltage terminal charge emission method insulation layer semiconductive shielding layer material china second conductive filler interface characteristics voltage 35.0 kv c |
| title | Research progress of semiconductive shielding layer of HVDC cable |
| title_full | Research progress of semiconductive shielding layer of HVDC cable |
| title_fullStr | Research progress of semiconductive shielding layer of HVDC cable |
| title_full_unstemmed | Research progress of semiconductive shielding layer of HVDC cable |
| title_short | Research progress of semiconductive shielding layer of HVDC cable |
| title_sort | research progress of semiconductive shielding layer of hvdc cable |
| topic | thermal conductivity cable shielding carbon power cables hvdc power transmission electric fields semiconductor materials high-voltage direct current cable electric field cable shielding materials electrical materials hvdc cable charge conduction thermal conduction carbon black content charge accumulation characteristics insulating layer high voltage terminal charge emission method insulation layer semiconductive shielding layer material china second conductive filler interface characteristics voltage 35.0 kv c |
| url | https://digital-library.theiet.org/content/journals/10.1049/hve.2019.0069 |
| work_keys_str_mv | AT yanhuiwei researchprogressofsemiconductiveshieldinglayerofhvdccable AT wanghan researchprogressofsemiconductiveshieldinglayerofhvdccable AT guochangli researchprogressofsemiconductiveshieldinglayerofhvdccable AT qingquanlei researchprogressofsemiconductiveshieldinglayerofhvdccable AT minglifu researchprogressofsemiconductiveshieldinglayerofhvdccable AT chunchenghao researchprogressofsemiconductiveshieldinglayerofhvdccable AT guanjunzhang researchprogressofsemiconductiveshieldinglayerofhvdccable |