Metal oxide semiconductor-based Schottky diodes: a review of recent advances

Metal-oxide-semiconductor (MOS) structures are essential for a wide range of semiconductor devices. This study reviews the development of MOS Schottky diode, which offers enhanced performance when compared with conventional metal-semiconductor Schottky diode structures because of the presence of the...

Полное описание

Библиографические подробности
Главный автор: Noorah A Al-Ahmadi
Формат: Статья
Язык:English
Опубликовано: IOP Publishing 2020-01-01
Серии:Materials Research Express
Предметы:
Online-ссылка:https://doi.org/10.1088/2053-1591/ab7a60

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