Metal oxide semiconductor-based Schottky diodes: a review of recent advances
Metal-oxide-semiconductor (MOS) structures are essential for a wide range of semiconductor devices. This study reviews the development of MOS Schottky diode, which offers enhanced performance when compared with conventional metal-semiconductor Schottky diode structures because of the presence of the...
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| Формат: | Стаття |
| Мова: | English |
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IOP Publishing
2020-01-01
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| Серія: | Materials Research Express |
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| Онлайн доступ: | https://doi.org/10.1088/2053-1591/ab7a60 |