A MAPbBr3/PdSe2 Schottky junction-based optoelectronic sensor with self-powered and switchable photocurrents
Neuromorphic optoelectronic sensors with in-sensor computing architecture hold great promise for applications that require processing large amounts of redundant data, such as the Internet of Things, robotics, and environmental sciences, due to their advantages of low time latency and energy efficien...
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| Format: | Article |
| Language: | English |
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Elsevier
2023-10-01
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| Series: | Materials & Design |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S0264127523007839 |
| _version_ | 1797647925163065344 |
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| author | Jingni Zhang Xianfeng Feng Luyao Mei Wenzhi Yu Han Song Nan Cui Tinghe Yun Haoran Mu Shenghuang Lin |
| author_facet | Jingni Zhang Xianfeng Feng Luyao Mei Wenzhi Yu Han Song Nan Cui Tinghe Yun Haoran Mu Shenghuang Lin |
| author_sort | Jingni Zhang |
| collection | DOAJ |
| description | Neuromorphic optoelectronic sensors with in-sensor computing architecture hold great promise for applications that require processing large amounts of redundant data, such as the Internet of Things, robotics, and environmental sciences, due to their advantages of low time latency and energy efficiency. Halide perovskites, known for their extraordinary optoelectronic properties and stimuli-responsive characteristics, offer excellent opportunities for developing switchable visual sensors with high sensitivity, fast response, low energy consumption, and wide adaptive range. In this work, we successfully realized a MAPbBr3-PdSe2 heterojunction-based optoelectronic sensor, demonstrating a responsivity of 28 mA/W and a high specific detectivity of 5.2 × 1011 Jones. A fast response time of ∼ 25 μs has also been achieved. Additionally, we investigated the role of voltage-induced ion migration in actively adjusting the device's photoresponse capacity. Under 0 V bias, the device exhibited a wide switchable range of optical responsivity from 137.5% to 27000%, significantly surpassing pure perovskite-based devices in previous reports. Moreover, we demonstrated the device's adaptive learning capabilities and reproducible switching characteristics by simulating Pavlovian classical conditioned reflex experiments using electrical modulation. These findings open up exciting possibilities for next-generation artificial vision systems that are energy-efficient, adaptive, and capable of learning and effectively responding to varying visual conditions. |
| first_indexed | 2024-03-11T15:24:42Z |
| format | Article |
| id | doaj.art-e846af7986464be1af9a9207d15a53f3 |
| institution | Directory Open Access Journal |
| issn | 0264-1275 |
| language | English |
| last_indexed | 2024-03-11T15:24:42Z |
| publishDate | 2023-10-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Materials & Design |
| spelling | doaj.art-e846af7986464be1af9a9207d15a53f32023-10-28T05:06:40ZengElsevierMaterials & Design0264-12752023-10-01234112368A MAPbBr3/PdSe2 Schottky junction-based optoelectronic sensor with self-powered and switchable photocurrentsJingni Zhang0Xianfeng Feng1Luyao Mei2Wenzhi Yu3Han Song4Nan Cui5Tinghe Yun6Haoran Mu7Shenghuang Lin8School of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, PR China; Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, PR ChinaSchool of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, PR China; Corresponding authors.Guangdong Provincial Key Laboratory of Optoelectronic Information Processing Chips and Systems, School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai, Guangdong 519082, PR ChinaSongshan Lake Materials Laboratory, Dongguan, Guangdong 523808, PR ChinaSongshan Lake Materials Laboratory, Dongguan, Guangdong 523808, PR ChinaSongshan Lake Materials Laboratory, Dongguan, Guangdong 523808, PR ChinaSongshan Lake Materials Laboratory, Dongguan, Guangdong 523808, PR ChinaSongshan Lake Materials Laboratory, Dongguan, Guangdong 523808, PR China; Corresponding authors.Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, PR China; Corresponding authors.Neuromorphic optoelectronic sensors with in-sensor computing architecture hold great promise for applications that require processing large amounts of redundant data, such as the Internet of Things, robotics, and environmental sciences, due to their advantages of low time latency and energy efficiency. Halide perovskites, known for their extraordinary optoelectronic properties and stimuli-responsive characteristics, offer excellent opportunities for developing switchable visual sensors with high sensitivity, fast response, low energy consumption, and wide adaptive range. In this work, we successfully realized a MAPbBr3-PdSe2 heterojunction-based optoelectronic sensor, demonstrating a responsivity of 28 mA/W and a high specific detectivity of 5.2 × 1011 Jones. A fast response time of ∼ 25 μs has also been achieved. Additionally, we investigated the role of voltage-induced ion migration in actively adjusting the device's photoresponse capacity. Under 0 V bias, the device exhibited a wide switchable range of optical responsivity from 137.5% to 27000%, significantly surpassing pure perovskite-based devices in previous reports. Moreover, we demonstrated the device's adaptive learning capabilities and reproducible switching characteristics by simulating Pavlovian classical conditioned reflex experiments using electrical modulation. These findings open up exciting possibilities for next-generation artificial vision systems that are energy-efficient, adaptive, and capable of learning and effectively responding to varying visual conditions.http://www.sciencedirect.com/science/article/pii/S0264127523007839Vision sensorHalide perovskiteHeterojunctionSelf-driven |
| spellingShingle | Jingni Zhang Xianfeng Feng Luyao Mei Wenzhi Yu Han Song Nan Cui Tinghe Yun Haoran Mu Shenghuang Lin A MAPbBr3/PdSe2 Schottky junction-based optoelectronic sensor with self-powered and switchable photocurrents Materials & Design Vision sensor Halide perovskite Heterojunction Self-driven |
| title | A MAPbBr3/PdSe2 Schottky junction-based optoelectronic sensor with self-powered and switchable photocurrents |
| title_full | A MAPbBr3/PdSe2 Schottky junction-based optoelectronic sensor with self-powered and switchable photocurrents |
| title_fullStr | A MAPbBr3/PdSe2 Schottky junction-based optoelectronic sensor with self-powered and switchable photocurrents |
| title_full_unstemmed | A MAPbBr3/PdSe2 Schottky junction-based optoelectronic sensor with self-powered and switchable photocurrents |
| title_short | A MAPbBr3/PdSe2 Schottky junction-based optoelectronic sensor with self-powered and switchable photocurrents |
| title_sort | mapbbr3 pdse2 schottky junction based optoelectronic sensor with self powered and switchable photocurrents |
| topic | Vision sensor Halide perovskite Heterojunction Self-driven |
| url | http://www.sciencedirect.com/science/article/pii/S0264127523007839 |
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