The Effects of Annealing Temperatures and Dimethylformamide Doses on Porous TiO<sub>2</sub> Films

In this study, we develop a facile and feasible synthetic technique for producing denser porous titanium dioxide (TiO<sub>2</sub>) films. The porous TiO<sub>2</sub> films are effectively prepared using a sol–gel process with dimethylformamide (DMF). The TiO<sub>2</su...

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Bibliographic Details
Main Authors: Pao-Hsun Huang, Cheng-Han Wu, Cheng-Kuan Wu, Yu-Quan Zhu, Jing Liu, Kuan-Wei Lee, Chien-Jung Huang
Format: Article
Language:English
Published: MDPI AG 2022-12-01
Series:Crystals
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Online Access:https://www.mdpi.com/2073-4352/13/1/61
Description
Summary:In this study, we develop a facile and feasible synthetic technique for producing denser porous titanium dioxide (TiO<sub>2</sub>) films. The porous TiO<sub>2</sub> films are effectively prepared using a sol–gel process with dimethylformamide (DMF). The TiO<sub>2</sub> solution is synthesized by adjusting DMF doses ranging from 0 to 10 wt%, and the as-grown TiO<sub>2</sub> films are further annealed at different temperatures from 300 to 500 °C. The TiO<sub>2</sub> films exhibit an asymmetry anatase TiO<sub>2</sub> phase as annealing temperatures increase, and a denser structure as DMF doses increase. The optical properties of all samples are studied, and the porous TiO<sub>2</sub> obtained by 7.5 wt% DMF dose demonstrates a remarkable transmittance and reflectance of 51.87% and 27.55%, respectively, in the visible region from 350 to 850 nm when compared to the pure TiO<sub>2</sub> films. The calculated band gap values range from 3.15 to 3.25 eV. Furthermore, the resistivity of 350 °C-annealed porous TiO<sub>2</sub> thin film is determined by the Hall effect, revealing an increase from 4.46 to an of average 4.79 ohm · cm after injecting DMF solvent. These findings have the potential to assist a growing number of optoelectronic applications.
ISSN:2073-4352