Comparative Study of the Parameter Acquisition Methods for the Cauer Thermal Network Model of an IGBT Module

Comparative Study of the Parameter Acquisition Methods for the Cauer Thermal Network Model of an IGBT Module

Under the operating conditions of high power and high switching frequency, an insulated gate bipolar transistor (IGBT) chip can produce relatively large power loss, causing the junction temperature to rise rapidly; consequently, the reliability of the IGBT module can be seriously affected. Therefore...

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Bibliographic Details
Main Authors: Tong An, Rui Zhou, Fei Qin, Yanwei Dai, Yanpeng Gong, Pei Chen
Format: Article
Language:English
Published: MDPI AG 2023-03-01
Series:Electronics
Subjects:
insulated gate bipolar transistor
junction temperature
Cauer thermal network models
Online Access:https://www.mdpi.com/2079-9292/12/7/1650

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