Conversion of ALD CuO Thin Films into Transparent Conductive p‐Type CuI Thin Films
Abstract Copper iodide (CuI) is a high‐performance p‐type transparent semiconductor that can be used in numerous applications, such as transistors, diodes, and solar cells. However, the lack of conformal and scalable methods to deposit CuI thin films limits its establishment in applications that inv...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2023-01-01
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| Series: | Advanced Materials Interfaces |
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| Online Access: | https://doi.org/10.1002/admi.202201860 |
| _version_ | 1797730916660936704 |
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| author | Alexander Weiß Jacqueline Goldmann Sakari Kettunen Georgi Popov Tomi Iivonen Miika Mattinen Pasi Jalkanen Timo Hatanpää Markku Leskelä Mikko Ritala Marianna Kemell |
| author_facet | Alexander Weiß Jacqueline Goldmann Sakari Kettunen Georgi Popov Tomi Iivonen Miika Mattinen Pasi Jalkanen Timo Hatanpää Markku Leskelä Mikko Ritala Marianna Kemell |
| author_sort | Alexander Weiß |
| collection | DOAJ |
| description | Abstract Copper iodide (CuI) is a high‐performance p‐type transparent semiconductor that can be used in numerous applications, such as transistors, diodes, and solar cells. However, the lack of conformal and scalable methods to deposit CuI thin films limits its establishment in applications that involve complex‐shaped and/or large substrate areas. In this work, atomic layer deposition (ALD) is employed to enable scalable and conformal thin film deposition. A two‐step approach relying on ALD of CuO and its subsequent conversion to CuI via exposure to HI vapor at room temperature is demonstrated. The resulting CuI films are phase‐pure, uniform, and of high purity. Furthermore, CuI films on several substrates such as Si, amorphous Al2O3, n‐type TiO2, and γ‐CsPbI3 perovskite are prepared. With the resulting n‐TiO2/p‐CuI structure, the easy and straightforward fabrication of a diode structure as a proof‐of‐concept device is demonstrated. Moreover, the successful deposition of CuI on γ‐CsPbI3 proves the compatibility of the process for using CuI as the hole transport layer in perovskite solar cell applications in the nip‐configuration. It is believed that the ALD‐based approach described in this work will offer a viable alternative for depositing transparent conductive p‐type CuI thin films in applications that involve complex high aspect ratio structures and large substrate areas. |
| first_indexed | 2024-03-12T11:51:03Z |
| format | Article |
| id | doaj.art-e8ba49444f6f4cb6ad4411c38c05b12d |
| institution | Directory Open Access Journal |
| issn | 2196-7350 |
| language | English |
| last_indexed | 2024-03-12T11:51:03Z |
| publishDate | 2023-01-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj.art-e8ba49444f6f4cb6ad4411c38c05b12d2023-08-31T08:56:33ZengWiley-VCHAdvanced Materials Interfaces2196-73502023-01-01103n/an/a10.1002/admi.202201860Conversion of ALD CuO Thin Films into Transparent Conductive p‐Type CuI Thin FilmsAlexander Weiß0Jacqueline Goldmann1Sakari Kettunen2Georgi Popov3Tomi Iivonen4Miika Mattinen5Pasi Jalkanen6Timo Hatanpää7Markku Leskelä8Mikko Ritala9Marianna Kemell10Department of Chemistry University of Helsinki P. O. Box 55 Helsinki FI‐00014 FinlandDepartment of Chemistry University of Helsinki P. O. Box 55 Helsinki FI‐00014 FinlandDepartment of Chemistry University of Helsinki P. O. Box 55 Helsinki FI‐00014 FinlandDepartment of Chemistry University of Helsinki P. O. Box 55 Helsinki FI‐00014 FinlandDepartment of Chemistry University of Helsinki P. O. Box 55 Helsinki FI‐00014 FinlandDepartment of Chemistry University of Helsinki P. O. Box 55 Helsinki FI‐00014 FinlandDepartment of Physics University of Helsinki P. O. Box 43 Helsinki FI‐00014 FinlandDepartment of Chemistry University of Helsinki P. O. Box 55 Helsinki FI‐00014 FinlandDepartment of Chemistry University of Helsinki P. O. Box 55 Helsinki FI‐00014 FinlandDepartment of Chemistry University of Helsinki P. O. Box 55 Helsinki FI‐00014 FinlandDepartment of Chemistry University of Helsinki P. O. Box 55 Helsinki FI‐00014 FinlandAbstract Copper iodide (CuI) is a high‐performance p‐type transparent semiconductor that can be used in numerous applications, such as transistors, diodes, and solar cells. However, the lack of conformal and scalable methods to deposit CuI thin films limits its establishment in applications that involve complex‐shaped and/or large substrate areas. In this work, atomic layer deposition (ALD) is employed to enable scalable and conformal thin film deposition. A two‐step approach relying on ALD of CuO and its subsequent conversion to CuI via exposure to HI vapor at room temperature is demonstrated. The resulting CuI films are phase‐pure, uniform, and of high purity. Furthermore, CuI films on several substrates such as Si, amorphous Al2O3, n‐type TiO2, and γ‐CsPbI3 perovskite are prepared. With the resulting n‐TiO2/p‐CuI structure, the easy and straightforward fabrication of a diode structure as a proof‐of‐concept device is demonstrated. Moreover, the successful deposition of CuI on γ‐CsPbI3 proves the compatibility of the process for using CuI as the hole transport layer in perovskite solar cell applications in the nip‐configuration. It is believed that the ALD‐based approach described in this work will offer a viable alternative for depositing transparent conductive p‐type CuI thin films in applications that involve complex high aspect ratio structures and large substrate areas.https://doi.org/10.1002/admi.202201860atomic layer depositioncopper(I) iodidehole transport layerperovskite solar celltransparent p‐type semiconductor |
| spellingShingle | Alexander Weiß Jacqueline Goldmann Sakari Kettunen Georgi Popov Tomi Iivonen Miika Mattinen Pasi Jalkanen Timo Hatanpää Markku Leskelä Mikko Ritala Marianna Kemell Conversion of ALD CuO Thin Films into Transparent Conductive p‐Type CuI Thin Films Advanced Materials Interfaces atomic layer deposition copper(I) iodide hole transport layer perovskite solar cell transparent p‐type semiconductor |
| title | Conversion of ALD CuO Thin Films into Transparent Conductive p‐Type CuI Thin Films |
| title_full | Conversion of ALD CuO Thin Films into Transparent Conductive p‐Type CuI Thin Films |
| title_fullStr | Conversion of ALD CuO Thin Films into Transparent Conductive p‐Type CuI Thin Films |
| title_full_unstemmed | Conversion of ALD CuO Thin Films into Transparent Conductive p‐Type CuI Thin Films |
| title_short | Conversion of ALD CuO Thin Films into Transparent Conductive p‐Type CuI Thin Films |
| title_sort | conversion of ald cuo thin films into transparent conductive p type cui thin films |
| topic | atomic layer deposition copper(I) iodide hole transport layer perovskite solar cell transparent p‐type semiconductor |
| url | https://doi.org/10.1002/admi.202201860 |
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