High Speed Back-Bias Voltage (VBB) Generator with Improved Pumping Current
Due to the advance of dynamic random access memory (DRAM) technologies with the steadfast increase of density with aggressively scaled storage capacitors, the supply voltage has been lowered to under 1 V to reduce power consumption. The above progress has been accompanied by the increasingly difficu...
Main Authors: | Taegun Yim, Choongkeun Lee, Hongil Yoon |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2020-11-01
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Series: | Electronics |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-9292/9/11/1835 |
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