Investigation on Tunneling-based Ternary CMOS with Ferroelectric-Gate Field Effect Transistor Using TCAD Simulation

Investigation on Tunneling-based Ternary CMOS with Ferroelectric-Gate Field Effect Transistor Using TCAD Simulation

Ternary complementary metal-oxide-semiconductor technology has been spotlighted as a promising system to replace conventional binary complementary metal-oxide-semiconductor (CMOS) with supply voltage (V<sub>DD</sub>) and power scaling limitations. Recently, wafer-level integrated tunneli...

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Bibliographic Details
Main Authors: Kitae Lee, Sihyun Kim, Daewoong Kwon, Byung-Gook Park
Format: Article
Language:English
Published: MDPI AG 2020-07-01
Series:Applied Sciences
Subjects:
ferroelectric
band-to-band tunneling
ternary CMOS
low power devices
semiconductor devices
Online Access:https://www.mdpi.com/2076-3417/10/14/4977

Internet

https://www.mdpi.com/2076-3417/10/14/4977

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