A Thermoelectric Polymer Field-Effect Transistor via Iodine-Doped P3HT
Doping can alter certain electronics, including the thermoelectric properties of an organic semiconductor. These alterations may enable viable tunable devices that could be useful in temperature sensing for autonomous controls. Here, we demonstrate a dual-modulation organic field-effect transistor (...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-01-01
|
| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/15/2/172 |
| _version_ | 1797297509768364032 |
|---|---|
| author | Joseph Wayne Norman Sam-Shajing Sun |
| author_facet | Joseph Wayne Norman Sam-Shajing Sun |
| author_sort | Joseph Wayne Norman |
| collection | DOAJ |
| description | Doping can alter certain electronics, including the thermoelectric properties of an organic semiconductor. These alterations may enable viable tunable devices that could be useful in temperature sensing for autonomous controls. Here, we demonstrate a dual-modulation organic field-effect transistor (OFET) where temperature can modulate the current-voltage characteristics of the OFET and gate voltage can modulate the thermoelectric properties of the active layer in the same device. Specifically, Poly(3-hexylthiophene-2,5-diyl) (P3HT) was utilized as the host p-type semiconducting polymer, and iodine was utilized as the thermoelectric minority dopant. The finished devices were characterized with a semiconductor analyzer system with temperature controlled using two thermoelectric cooling plates. The FETs with iodine doping levels in the range of 0.25% to 0.5% mole ratio with respect to the P3HT exhibit the greatest on/off ratios. This study also observed that P3HT thin film samples with an intermediate iodine doping concentration of 0.25% mole ratio exhibit an optimal thermoelectric power factor (PF). |
| first_indexed | 2024-03-07T22:21:20Z |
| format | Article |
| id | doaj.art-e95288348ba541e9b71e6496305e0cc8 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-07T22:21:20Z |
| publishDate | 2024-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-e95288348ba541e9b71e6496305e0cc82024-02-23T15:27:30ZengMDPI AGMicromachines2072-666X2024-01-0115217210.3390/mi15020172A Thermoelectric Polymer Field-Effect Transistor via Iodine-Doped P3HTJoseph Wayne Norman0Sam-Shajing Sun1Center for Materials Research, Norfolk State University, 700 Park Ave., Norfolk, VA 23504, USACenter for Materials Research, Norfolk State University, 700 Park Ave., Norfolk, VA 23504, USADoping can alter certain electronics, including the thermoelectric properties of an organic semiconductor. These alterations may enable viable tunable devices that could be useful in temperature sensing for autonomous controls. Here, we demonstrate a dual-modulation organic field-effect transistor (OFET) where temperature can modulate the current-voltage characteristics of the OFET and gate voltage can modulate the thermoelectric properties of the active layer in the same device. Specifically, Poly(3-hexylthiophene-2,5-diyl) (P3HT) was utilized as the host p-type semiconducting polymer, and iodine was utilized as the thermoelectric minority dopant. The finished devices were characterized with a semiconductor analyzer system with temperature controlled using two thermoelectric cooling plates. The FETs with iodine doping levels in the range of 0.25% to 0.5% mole ratio with respect to the P3HT exhibit the greatest on/off ratios. This study also observed that P3HT thin film samples with an intermediate iodine doping concentration of 0.25% mole ratio exhibit an optimal thermoelectric power factor (PF).https://www.mdpi.com/2072-666X/15/2/172field-effect transistors FETthermoelectricpower factor PFpolymersdopingP3HT |
| spellingShingle | Joseph Wayne Norman Sam-Shajing Sun A Thermoelectric Polymer Field-Effect Transistor via Iodine-Doped P3HT Micromachines field-effect transistors FET thermoelectric power factor PF polymers doping P3HT |
| title | A Thermoelectric Polymer Field-Effect Transistor via Iodine-Doped P3HT |
| title_full | A Thermoelectric Polymer Field-Effect Transistor via Iodine-Doped P3HT |
| title_fullStr | A Thermoelectric Polymer Field-Effect Transistor via Iodine-Doped P3HT |
| title_full_unstemmed | A Thermoelectric Polymer Field-Effect Transistor via Iodine-Doped P3HT |
| title_short | A Thermoelectric Polymer Field-Effect Transistor via Iodine-Doped P3HT |
| title_sort | thermoelectric polymer field effect transistor via iodine doped p3ht |
| topic | field-effect transistors FET thermoelectric power factor PF polymers doping P3HT |
| url | https://www.mdpi.com/2072-666X/15/2/172 |
| work_keys_str_mv | AT josephwaynenorman athermoelectricpolymerfieldeffecttransistorviaiodinedopedp3ht AT samshajingsun athermoelectricpolymerfieldeffecttransistorviaiodinedopedp3ht AT josephwaynenorman thermoelectricpolymerfieldeffecttransistorviaiodinedopedp3ht AT samshajingsun thermoelectricpolymerfieldeffecttransistorviaiodinedopedp3ht |