On the importance of antimony for temporal evolution of emission from self-assembled (InGa) (AsSb)/GaAs quantum dots on GaP(001)
Understanding the carrier dynamics of nanostructures is the key for development and optimization of novel semiconductor nano-devices. Here, we study the optical properties and carrier dynamics of (InGa)(AsSb)/GaAs/GaP quantum dots (QDs) by means of non-resonant energy and time-resolved photoluminesc...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2021-01-01
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| Series: | New Journal of Physics |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/1367-2630/ac2bd6 |
| _version_ | 1827872727372922880 |
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| author | Petr Steindl Elisa Maddalena Sala Benito Alén Dieter Bimberg Petr Klenovský |
| author_facet | Petr Steindl Elisa Maddalena Sala Benito Alén Dieter Bimberg Petr Klenovský |
| author_sort | Petr Steindl |
| collection | DOAJ |
| description | Understanding the carrier dynamics of nanostructures is the key for development and optimization of novel semiconductor nano-devices. Here, we study the optical properties and carrier dynamics of (InGa)(AsSb)/GaAs/GaP quantum dots (QDs) by means of non-resonant energy and time-resolved photoluminescence depending on temperature. Studying this material system is fundamental in view of the ongoing implementation of such QDs for nano memory devices. The structures studied in this work include a single QD layer, QDs overgrown by a GaSb capping layer, and solely a GaAs quantum well, respectively. Theoretical analytical models allow to discern the common spectral features around the emission energy of 1.8 eV related to the GaAs quantum well and the GaP substrate. We observe type-I emission from QDs with recombination times between 2 ns and 10 ns, increasing towards lower energies. Moreover, based on the considerable tunability of the QDs depending on Sb incorporation, we suggest their utilization as quantum photonic sources embedded in complementary metal-oxide-semiconductor platforms, due to the feasibility of a nearly defect-free growth of GaP on Si. Finally, our analysis confirms the nature of the pumping power blue-shift of emission originating from the charged-background induced changes of the wavefunction spatial distribution. |
| first_indexed | 2024-03-12T16:27:57Z |
| format | Article |
| id | doaj.art-e953222e9f664f618a303d7221337c32 |
| institution | Directory Open Access Journal |
| issn | 1367-2630 |
| language | English |
| last_indexed | 2024-03-12T16:27:57Z |
| publishDate | 2021-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | New Journal of Physics |
| spelling | doaj.art-e953222e9f664f618a303d7221337c322023-08-08T15:40:18ZengIOP PublishingNew Journal of Physics1367-26302021-01-01231010302910.1088/1367-2630/ac2bd6On the importance of antimony for temporal evolution of emission from self-assembled (InGa) (AsSb)/GaAs quantum dots on GaP(001)Petr Steindl0https://orcid.org/0000-0001-9059-9202Elisa Maddalena Sala1https://orcid.org/0000-0001-8116-8830Benito Alén2https://orcid.org/0000-0003-3939-1611Dieter Bimberg3https://orcid.org/0000-0003-0364-6897Petr Klenovský4https://orcid.org/0000-0003-1914-164XDepartment of Condensed Matter Physics, Faculty of Science, Masaryk University , Kotlářská 267/2, 61137 Brno, Czech Republic; Huygens-Kamerlingh Onnes Laboratory, Leiden University , PO Box 9504, 2300 RA Leiden, The NetherlandsCenter for Nanophotonics, Institute for Solid State Physics, Technische Universität Berlin , Hardenbergstr. 36, 10623 Berlin, Germany; EPSRC National Epitaxy Facility, The University of Sheffield , North Campus, Broad Lane, S3 7HQ Sheffield, United KingdomInstituto de Micro y Nanotecnología , IMN-CNM, CSIC (CEI UAM+CSIC) Isaac Newton, 8, E-28760, Tres Cantos, Madrid, SpainCenter for Nanophotonics, Institute for Solid State Physics, Technische Universität Berlin , Hardenbergstr. 36, 10623 Berlin, Germany; ‘Bimberg Chinese-German Center for Green Photonics’ of the Chinese Academy of Sciences at CIOMP , 13033 Changchun, People’s Republic of ChinaDepartment of Condensed Matter Physics, Faculty of Science, Masaryk University , Kotlářská 267/2, 61137 Brno, Czech Republic; Czech Metrology Institute , Okružní 31, 63800 Brno, Czech RepublicUnderstanding the carrier dynamics of nanostructures is the key for development and optimization of novel semiconductor nano-devices. Here, we study the optical properties and carrier dynamics of (InGa)(AsSb)/GaAs/GaP quantum dots (QDs) by means of non-resonant energy and time-resolved photoluminescence depending on temperature. Studying this material system is fundamental in view of the ongoing implementation of such QDs for nano memory devices. The structures studied in this work include a single QD layer, QDs overgrown by a GaSb capping layer, and solely a GaAs quantum well, respectively. Theoretical analytical models allow to discern the common spectral features around the emission energy of 1.8 eV related to the GaAs quantum well and the GaP substrate. We observe type-I emission from QDs with recombination times between 2 ns and 10 ns, increasing towards lower energies. Moreover, based on the considerable tunability of the QDs depending on Sb incorporation, we suggest their utilization as quantum photonic sources embedded in complementary metal-oxide-semiconductor platforms, due to the feasibility of a nearly defect-free growth of GaP on Si. Finally, our analysis confirms the nature of the pumping power blue-shift of emission originating from the charged-background induced changes of the wavefunction spatial distribution.https://doi.org/10.1088/1367-2630/ac2bd6III–V semiconductorsquantum dotsphotoluminescencecarrier dynamicslifetimes |
| spellingShingle | Petr Steindl Elisa Maddalena Sala Benito Alén Dieter Bimberg Petr Klenovský On the importance of antimony for temporal evolution of emission from self-assembled (InGa) (AsSb)/GaAs quantum dots on GaP(001) New Journal of Physics III–V semiconductors quantum dots photoluminescence carrier dynamics lifetimes |
| title | On the importance of antimony for temporal evolution of emission from self-assembled (InGa) (AsSb)/GaAs quantum dots on GaP(001) |
| title_full | On the importance of antimony for temporal evolution of emission from self-assembled (InGa) (AsSb)/GaAs quantum dots on GaP(001) |
| title_fullStr | On the importance of antimony for temporal evolution of emission from self-assembled (InGa) (AsSb)/GaAs quantum dots on GaP(001) |
| title_full_unstemmed | On the importance of antimony for temporal evolution of emission from self-assembled (InGa) (AsSb)/GaAs quantum dots on GaP(001) |
| title_short | On the importance of antimony for temporal evolution of emission from self-assembled (InGa) (AsSb)/GaAs quantum dots on GaP(001) |
| title_sort | on the importance of antimony for temporal evolution of emission from self assembled inga assb gaas quantum dots on gap 001 |
| topic | III–V semiconductors quantum dots photoluminescence carrier dynamics lifetimes |
| url | https://doi.org/10.1088/1367-2630/ac2bd6 |
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