Ferroelectric switching in epitaxial GeTe films
In this paper, using a resonance-enhanced piezoresponse force microscopy approach supported by density functional theory computer simulations, we have demonstrated the ferroelectric switching in epitaxial GeTe films. It has been shown that in films with thickness on the order of several nanometers r...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2014-06-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4881735 |
| _version_ | 1819045446678478848 |
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| author | A. V. Kolobov D. J. Kim A. Giussani P. Fons J. Tominaga R. Calarco A. Gruverman |
| author_facet | A. V. Kolobov D. J. Kim A. Giussani P. Fons J. Tominaga R. Calarco A. Gruverman |
| author_sort | A. V. Kolobov |
| collection | DOAJ |
| description | In this paper, using a resonance-enhanced piezoresponse force microscopy approach supported by density functional theory computer simulations, we have demonstrated the ferroelectric switching in epitaxial GeTe films. It has been shown that in films with thickness on the order of several nanometers reversible reorientation of polarization occurs due to swapping of the shorter and longer Ge-Te bonds in the interior of the material. It is also hinted that for ultra thin films consisting of just several atomic layers weakly bonded to the substrate, ferroelectric switching may proceed through exchange of Ge and Te planes within individual GeTe layers. |
| first_indexed | 2024-12-21T10:28:42Z |
| format | Article |
| id | doaj.art-e96a2ddd20df44ac972b5defa0c531b7 |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-12-21T10:28:42Z |
| publishDate | 2014-06-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-e96a2ddd20df44ac972b5defa0c531b72022-12-21T19:07:15ZengAIP Publishing LLCAPL Materials2166-532X2014-06-0126066101066101-710.1063/1.4881735002406APMFerroelectric switching in epitaxial GeTe filmsA. V. Kolobov0D. J. Kim1A. Giussani2P. Fons3J. Tominaga4R. Calarco5A. Gruverman6Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562 JapanDepartment of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588-0299, USAPaul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, GermanyNanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562 JapanNanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562 JapanPaul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, GermanyDepartment of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588-0299, USAIn this paper, using a resonance-enhanced piezoresponse force microscopy approach supported by density functional theory computer simulations, we have demonstrated the ferroelectric switching in epitaxial GeTe films. It has been shown that in films with thickness on the order of several nanometers reversible reorientation of polarization occurs due to swapping of the shorter and longer Ge-Te bonds in the interior of the material. It is also hinted that for ultra thin films consisting of just several atomic layers weakly bonded to the substrate, ferroelectric switching may proceed through exchange of Ge and Te planes within individual GeTe layers.http://dx.doi.org/10.1063/1.4881735 |
| spellingShingle | A. V. Kolobov D. J. Kim A. Giussani P. Fons J. Tominaga R. Calarco A. Gruverman Ferroelectric switching in epitaxial GeTe films APL Materials |
| title | Ferroelectric switching in epitaxial GeTe films |
| title_full | Ferroelectric switching in epitaxial GeTe films |
| title_fullStr | Ferroelectric switching in epitaxial GeTe films |
| title_full_unstemmed | Ferroelectric switching in epitaxial GeTe films |
| title_short | Ferroelectric switching in epitaxial GeTe films |
| title_sort | ferroelectric switching in epitaxial gete films |
| url | http://dx.doi.org/10.1063/1.4881735 |
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