The effect of Cu concentration on some of the electrical properties of CdSe films
The CdSe pure films and doping with Cu (0.5, 1.5, 2.5, 4.0wt%) of thickness 0.9μm have been prepared by thermal evaporation technique on glass substrate. Annealing for all the prepared films have been achieved at 523K in vacuum to get good properties of the films. The effect of Cu concentration on...
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| Format: | Article |
| Language: | English |
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University of Baghdad
2008-03-01
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| Series: | Iraqi Journal of Physics |
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| Online Access: | https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/937 |
| _version_ | 1797871268004888576 |
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| author | E. M. Al-Fwadi |
| author_facet | E. M. Al-Fwadi |
| author_sort | E. M. Al-Fwadi |
| collection | DOAJ |
| description |
The CdSe pure films and doping with Cu (0.5, 1.5, 2.5, 4.0wt%) of thickness 0.9μm have been prepared by thermal evaporation technique on glass substrate. Annealing for all the prepared films have been achieved at 523K in vacuum to get good properties of the films. The effect of Cu concentration on some of the electrical properties such as D.C conductivity and Hall effect has been studied.
It has been found that the increase in Cu concentration caused increase in d.c conductivity for pure CdSe 3.75×10-4(Ω.cm)-1 at room temperatures to maximum value of 0.769(Ω.cm)-1 for 4wt%Cu.All films have shown two activation energies, where these value decreases with increasing doping ratio. The maximum value of activation energy was (0.319)eV for pure CdSe film in thermal range (293-363)K. Hall effect results has shown that the sample of pure CdSe film were n-type, while it is p-type for doping films. Also the charge carrier concentration decreases with increasing Cu concentration, and it varies between 2.1×1017 cm-3 for pure films, and 5×1016cm-3 for doping films with 4wt%Cu. The Hall mobility at laboratory temperature has been calculated, and it is increased exponentially from 0.012cm2/V.sec for the pure film to 88.435 cm2/V.sec for doped films with 4wt%Cu. The drift velocity of these films increases with increasing doping concentration.
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| first_indexed | 2024-04-10T00:41:13Z |
| format | Article |
| id | doaj.art-e981b6f7b2304f4f89e97fd523092aa6 |
| institution | Directory Open Access Journal |
| issn | 2070-4003 2664-5548 |
| language | English |
| last_indexed | 2024-04-10T00:41:13Z |
| publishDate | 2008-03-01 |
| publisher | University of Baghdad |
| record_format | Article |
| series | Iraqi Journal of Physics |
| spelling | doaj.art-e981b6f7b2304f4f89e97fd523092aa62023-03-14T05:52:14ZengUniversity of BaghdadIraqi Journal of Physics2070-40032664-55482008-03-0151The effect of Cu concentration on some of the electrical properties of CdSe filmsE. M. Al-Fwadi0Department of Physics, College of Science, University of Baghdad The CdSe pure films and doping with Cu (0.5, 1.5, 2.5, 4.0wt%) of thickness 0.9μm have been prepared by thermal evaporation technique on glass substrate. Annealing for all the prepared films have been achieved at 523K in vacuum to get good properties of the films. The effect of Cu concentration on some of the electrical properties such as D.C conductivity and Hall effect has been studied. It has been found that the increase in Cu concentration caused increase in d.c conductivity for pure CdSe 3.75×10-4(Ω.cm)-1 at room temperatures to maximum value of 0.769(Ω.cm)-1 for 4wt%Cu.All films have shown two activation energies, where these value decreases with increasing doping ratio. The maximum value of activation energy was (0.319)eV for pure CdSe film in thermal range (293-363)K. Hall effect results has shown that the sample of pure CdSe film were n-type, while it is p-type for doping films. Also the charge carrier concentration decreases with increasing Cu concentration, and it varies between 2.1×1017 cm-3 for pure films, and 5×1016cm-3 for doping films with 4wt%Cu. The Hall mobility at laboratory temperature has been calculated, and it is increased exponentially from 0.012cm2/V.sec for the pure film to 88.435 cm2/V.sec for doped films with 4wt%Cu. The drift velocity of these films increases with increasing doping concentration. https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/937electrical properties |
| spellingShingle | E. M. Al-Fwadi The effect of Cu concentration on some of the electrical properties of CdSe films Iraqi Journal of Physics electrical properties |
| title | The effect of Cu concentration on some of the electrical properties of CdSe films |
| title_full | The effect of Cu concentration on some of the electrical properties of CdSe films |
| title_fullStr | The effect of Cu concentration on some of the electrical properties of CdSe films |
| title_full_unstemmed | The effect of Cu concentration on some of the electrical properties of CdSe films |
| title_short | The effect of Cu concentration on some of the electrical properties of CdSe films |
| title_sort | effect of cu concentration on some of the electrical properties of cdse films |
| topic | electrical properties |
| url | https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/937 |
| work_keys_str_mv | AT emalfwadi theeffectofcuconcentrationonsomeoftheelectricalpropertiesofcdsefilms AT emalfwadi effectofcuconcentrationonsomeoftheelectricalpropertiesofcdsefilms |