Semi-insulating GaAs surface modifications and their influence in the response of THz devices
In this work, we use the Metal-Assisted Chemical Etching (MACE) technique together with an NH3 plasma treatment using a Remote Plasma-Enhanced Chemical Vapor Deposition (RPECVD) equipment to modify the surface of semi-insulating GaAs (SI-GaAs) substrates. Using our modified SI-GaAs, we fabricate pho...
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| Format: | Article |
| Language: | English |
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Elsevier
2021-05-01
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| Series: | Results in Physics |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379721002527 |
| _version_ | 1818827412816789504 |
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| author | A.L. Muñoz-Rosas N. Qureshi G. Paz-Martínez C.G. Treviño-Palacios J.C. Alonso-Huitrón A. Rodríguez-Gómez |
| author_facet | A.L. Muñoz-Rosas N. Qureshi G. Paz-Martínez C.G. Treviño-Palacios J.C. Alonso-Huitrón A. Rodríguez-Gómez |
| author_sort | A.L. Muñoz-Rosas |
| collection | DOAJ |
| description | In this work, we use the Metal-Assisted Chemical Etching (MACE) technique together with an NH3 plasma treatment using a Remote Plasma-Enhanced Chemical Vapor Deposition (RPECVD) equipment to modify the surface of semi-insulating GaAs (SI-GaAs) substrates. Using our modified SI-GaAs, we fabricate photoconductive antennas for THz emission to study the modification's influence on the optical and electrical antenna response. We found substantial gaps in the frequency-domain spectra of the devices, whose origin could reside in a change of the substrate's optical absorption due to: (a) a surficial chemical change or (b) a substrate topographic modification or a combination of both. We showed experimentally that slight and reproducible substrate surface modifications could lead to significant variations in the electrical behavior and THz response of SI-GaAs devices. |
| first_indexed | 2024-12-19T00:43:09Z |
| format | Article |
| id | doaj.art-e9dd685a518d4b5b8d58f6bc5c70def4 |
| institution | Directory Open Access Journal |
| issn | 2211-3797 |
| language | English |
| last_indexed | 2024-12-19T00:43:09Z |
| publishDate | 2021-05-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Physics |
| spelling | doaj.art-e9dd685a518d4b5b8d58f6bc5c70def42022-12-21T20:44:26ZengElsevierResults in Physics2211-37972021-05-0124104095Semi-insulating GaAs surface modifications and their influence in the response of THz devicesA.L. Muñoz-Rosas0N. Qureshi1G. Paz-Martínez2C.G. Treviño-Palacios3J.C. Alonso-Huitrón4A. Rodríguez-Gómez5Instituto de Física, Universidad Nacional Autónoma de México, Circuito de la Investigación Científica s/n, Ciudad Universitaria, A.P. 20-364, Coyoacán 04510, Ciudad de México, MexicoInstituto de Ciencias Aplicadas y Tecnología, Universidad Nacional Autónoma de México, A.P.70-180, Ciudad de México 04510, MexicoUniversidad de Salamanca, departamento de Física Aplicada, Plaza de la Merced s/n, 37008, Salamanca, EspañaInstituto Nacional de Astrofísica, Óptica y Electrónica Luis Enrique Erro 1, Sta. Ma. Tonantzintla, Puebla Pue 72840, MexicoInstituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Ciudad Universitaria, A.P. 70-360, Coyoacán 04510, Ciudad de México, MexicoInstituto de Física, Universidad Nacional Autónoma de México, Circuito de la Investigación Científica s/n, Ciudad Universitaria, A.P. 20-364, Coyoacán 04510, Ciudad de México, Mexico; Corresponding author.In this work, we use the Metal-Assisted Chemical Etching (MACE) technique together with an NH3 plasma treatment using a Remote Plasma-Enhanced Chemical Vapor Deposition (RPECVD) equipment to modify the surface of semi-insulating GaAs (SI-GaAs) substrates. Using our modified SI-GaAs, we fabricate photoconductive antennas for THz emission to study the modification's influence on the optical and electrical antenna response. We found substantial gaps in the frequency-domain spectra of the devices, whose origin could reside in a change of the substrate's optical absorption due to: (a) a surficial chemical change or (b) a substrate topographic modification or a combination of both. We showed experimentally that slight and reproducible substrate surface modifications could lead to significant variations in the electrical behavior and THz response of SI-GaAs devices.http://www.sciencedirect.com/science/article/pii/S2211379721002527MACE techniqueGaAs nanostructurationPhotoconductive antennasTHz emission |
| spellingShingle | A.L. Muñoz-Rosas N. Qureshi G. Paz-Martínez C.G. Treviño-Palacios J.C. Alonso-Huitrón A. Rodríguez-Gómez Semi-insulating GaAs surface modifications and their influence in the response of THz devices Results in Physics MACE technique GaAs nanostructuration Photoconductive antennas THz emission |
| title | Semi-insulating GaAs surface modifications and their influence in the response of THz devices |
| title_full | Semi-insulating GaAs surface modifications and their influence in the response of THz devices |
| title_fullStr | Semi-insulating GaAs surface modifications and their influence in the response of THz devices |
| title_full_unstemmed | Semi-insulating GaAs surface modifications and their influence in the response of THz devices |
| title_short | Semi-insulating GaAs surface modifications and their influence in the response of THz devices |
| title_sort | semi insulating gaas surface modifications and their influence in the response of thz devices |
| topic | MACE technique GaAs nanostructuration Photoconductive antennas THz emission |
| url | http://www.sciencedirect.com/science/article/pii/S2211379721002527 |
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