High-lying valley-polarized trions in 2D semiconductors
Here, the authors observe tightly bound, valley-polarized, UV-emissive trions in monolayer transition metal dichalcogenide transistors. These are quasiparticles composed of an electron from a high-lying conduction band with negative effective mass, a hole from the first valence band, and an addition...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2022-11-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-022-33939-w |
| _version_ | 1811217107944210432 |
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| author | Kai-Qiang Lin Jonas D. Ziegler Marina A. Semina Javid V. Mamedov Kenji Watanabe Takashi Taniguchi Sebastian Bange Alexey Chernikov Mikhail M. Glazov John M. Lupton |
| author_facet | Kai-Qiang Lin Jonas D. Ziegler Marina A. Semina Javid V. Mamedov Kenji Watanabe Takashi Taniguchi Sebastian Bange Alexey Chernikov Mikhail M. Glazov John M. Lupton |
| author_sort | Kai-Qiang Lin |
| collection | DOAJ |
| description | Here, the authors observe tightly bound, valley-polarized, UV-emissive trions in monolayer transition metal dichalcogenide transistors. These are quasiparticles composed of an electron from a high-lying conduction band with negative effective mass, a hole from the first valence band, and an additional charge from a band-edge state. |
| first_indexed | 2024-04-12T06:48:34Z |
| format | Article |
| id | doaj.art-e9ef01f8c32540968213e8204f97bb25 |
| institution | Directory Open Access Journal |
| issn | 2041-1723 |
| language | English |
| last_indexed | 2024-04-12T06:48:34Z |
| publishDate | 2022-11-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj.art-e9ef01f8c32540968213e8204f97bb252022-12-22T03:43:26ZengNature PortfolioNature Communications2041-17232022-11-011311810.1038/s41467-022-33939-wHigh-lying valley-polarized trions in 2D semiconductorsKai-Qiang Lin0Jonas D. Ziegler1Marina A. Semina2Javid V. Mamedov3Kenji Watanabe4Takashi Taniguchi5Sebastian Bange6Alexey Chernikov7Mikhail M. Glazov8John M. Lupton9Department of Physics, University of RegensburgDresden Integrated Center for Applied Physics and Photonic Materials and Würzburg-Dresden Cluster of Excellence ct.qmat, Technische Universität DresdenIoffe InstituteNational Research University, Higher School of EconomicsCenter for Functional Materials, National Institute for Materials ScienceInternational Center for Materials Nanoarchitectonics, National Institute for Materials ScienceDepartment of Physics, University of RegensburgDresden Integrated Center for Applied Physics and Photonic Materials and Würzburg-Dresden Cluster of Excellence ct.qmat, Technische Universität DresdenIoffe InstituteDepartment of Physics, University of RegensburgHere, the authors observe tightly bound, valley-polarized, UV-emissive trions in monolayer transition metal dichalcogenide transistors. These are quasiparticles composed of an electron from a high-lying conduction band with negative effective mass, a hole from the first valence band, and an additional charge from a band-edge state.https://doi.org/10.1038/s41467-022-33939-w |
| spellingShingle | Kai-Qiang Lin Jonas D. Ziegler Marina A. Semina Javid V. Mamedov Kenji Watanabe Takashi Taniguchi Sebastian Bange Alexey Chernikov Mikhail M. Glazov John M. Lupton High-lying valley-polarized trions in 2D semiconductors Nature Communications |
| title | High-lying valley-polarized trions in 2D semiconductors |
| title_full | High-lying valley-polarized trions in 2D semiconductors |
| title_fullStr | High-lying valley-polarized trions in 2D semiconductors |
| title_full_unstemmed | High-lying valley-polarized trions in 2D semiconductors |
| title_short | High-lying valley-polarized trions in 2D semiconductors |
| title_sort | high lying valley polarized trions in 2d semiconductors |
| url | https://doi.org/10.1038/s41467-022-33939-w |
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