Fabrication and Characterization of Ultra-wide Bandgap AlN-Based Schottky Diodes on Sapphire by MOCVD
AlN Schottky diodes with various device geometries were fabricated on sapphire substrate and their temperature-dependent current-voltage characteristics were analyzed. At forward bias, high ideality factors were obtained, indicating a large deviation from the ideal thermionic emission model. At reve...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2017-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8047476/ |
| _version_ | 1818369853088595968 |
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| author | Houqiang Fu Xuanqi Huang Hong Chen Zhijian Lu Yuji Zhao |
| author_facet | Houqiang Fu Xuanqi Huang Hong Chen Zhijian Lu Yuji Zhao |
| author_sort | Houqiang Fu |
| collection | DOAJ |
| description | AlN Schottky diodes with various device geometries were fabricated on sapphire substrate and their temperature-dependent current-voltage characteristics were analyzed. At forward bias, high ideality factors were obtained, indicating a large deviation from the ideal thermionic emission model. At reverse bias, the breakdown voltage showed a negative temperature dependence, and the leakage current was well described using a 2-D variable-range hopping conduction model. Furthermore, the breakdown voltages and leakage currents of the devices showed a strong dependence on the surface distance between the ohmic and Schottky contacts, but a relatively small dependence on the area of the Schottky contacts. These results suggest surface states between ohmic and Schottky contacts play a more important role than the metal/AlN interface in determining the reverse breakdown and leakage current of AlN Schottky diodes. A quantitative study of AlN Schottky diodes at high temperature reveals a geometry-dependent surface breakdown electric field and surface leakage current. Surface passivation and treatments may enhance the device performances and impact the reverse breakdown and current leakage mechanisms. These results will serve as the guidance for the design and fabrication of future AlN electronic devices. |
| first_indexed | 2024-12-13T23:30:26Z |
| format | Article |
| id | doaj.art-ea0d13d624dd4ac7b73bdc52c95d6a61 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-13T23:30:26Z |
| publishDate | 2017-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-ea0d13d624dd4ac7b73bdc52c95d6a612022-12-21T23:27:26ZengIEEEIEEE Journal of the Electron Devices Society2168-67342017-01-015651852410.1109/JEDS.2017.27515548047476Fabrication and Characterization of Ultra-wide Bandgap AlN-Based Schottky Diodes on Sapphire by MOCVDHouqiang Fu0https://orcid.org/0000-0002-1125-8328Xuanqi Huang1Hong Chen2Zhijian Lu3Yuji Zhao4School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, AZ, USASchool of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, AZ, USASchool of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, AZ, USASchool of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, AZ, USASchool of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, AZ, USAAlN Schottky diodes with various device geometries were fabricated on sapphire substrate and their temperature-dependent current-voltage characteristics were analyzed. At forward bias, high ideality factors were obtained, indicating a large deviation from the ideal thermionic emission model. At reverse bias, the breakdown voltage showed a negative temperature dependence, and the leakage current was well described using a 2-D variable-range hopping conduction model. Furthermore, the breakdown voltages and leakage currents of the devices showed a strong dependence on the surface distance between the ohmic and Schottky contacts, but a relatively small dependence on the area of the Schottky contacts. These results suggest surface states between ohmic and Schottky contacts play a more important role than the metal/AlN interface in determining the reverse breakdown and leakage current of AlN Schottky diodes. A quantitative study of AlN Schottky diodes at high temperature reveals a geometry-dependent surface breakdown electric field and surface leakage current. Surface passivation and treatments may enhance the device performances and impact the reverse breakdown and current leakage mechanisms. These results will serve as the guidance for the design and fabrication of future AlN electronic devices.https://ieeexplore.ieee.org/document/8047476/Aluminum nitrideSchottky diodessurface statesideality factorbreakdowncurrent leakage |
| spellingShingle | Houqiang Fu Xuanqi Huang Hong Chen Zhijian Lu Yuji Zhao Fabrication and Characterization of Ultra-wide Bandgap AlN-Based Schottky Diodes on Sapphire by MOCVD IEEE Journal of the Electron Devices Society Aluminum nitride Schottky diodes surface states ideality factor breakdown current leakage |
| title | Fabrication and Characterization of Ultra-wide Bandgap AlN-Based Schottky Diodes on Sapphire by MOCVD |
| title_full | Fabrication and Characterization of Ultra-wide Bandgap AlN-Based Schottky Diodes on Sapphire by MOCVD |
| title_fullStr | Fabrication and Characterization of Ultra-wide Bandgap AlN-Based Schottky Diodes on Sapphire by MOCVD |
| title_full_unstemmed | Fabrication and Characterization of Ultra-wide Bandgap AlN-Based Schottky Diodes on Sapphire by MOCVD |
| title_short | Fabrication and Characterization of Ultra-wide Bandgap AlN-Based Schottky Diodes on Sapphire by MOCVD |
| title_sort | fabrication and characterization of ultra wide bandgap aln based schottky diodes on sapphire by mocvd |
| topic | Aluminum nitride Schottky diodes surface states ideality factor breakdown current leakage |
| url | https://ieeexplore.ieee.org/document/8047476/ |
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