Fabrication and Characterization of Ultra-wide Bandgap AlN-Based Schottky Diodes on Sapphire by MOCVD

Fabrication and Characterization of Ultra-wide Bandgap AlN-Based Schottky Diodes on Sapphire by MOCVD

AlN Schottky diodes with various device geometries were fabricated on sapphire substrate and their temperature-dependent current-voltage characteristics were analyzed. At forward bias, high ideality factors were obtained, indicating a large deviation from the ideal thermionic emission model. At reve...

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Bibliographic Details
Main Authors: Houqiang Fu, Xuanqi Huang, Hong Chen, Zhijian Lu, Yuji Zhao
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Aluminum nitride
Schottky diodes
surface states
ideality factor
breakdown
current leakage
Online Access:https://ieeexplore.ieee.org/document/8047476/

Internet

https://ieeexplore.ieee.org/document/8047476/

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