Quantum Hall effect systems of electrons with anisotropic patterns

An almost ideal two-dimensional system of electrons can now be easily created in semiconductor heterojunctions. The quantum Hall effect state of the electrons is induced via the application of a strong perpendicular magnetic under specific quantum conditions. The most robust integer and/or fractiona...

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Main Author: Orion Ciftja
Format: Article
Language:English
Published: AIP Publishing LLC 2023-01-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/9.0000394
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author Orion Ciftja
author_facet Orion Ciftja
author_sort Orion Ciftja
collection DOAJ
description An almost ideal two-dimensional system of electrons can now be easily created in semiconductor heterojunctions. The quantum Hall effect state of the electrons is induced via the application of a strong perpendicular magnetic under specific quantum conditions. The most robust integer and/or fractional quantum Hall states already observed show the expected characteristic magnetoresistance for such systems. However, anisotropic patterns and features in transport properties have been seen for a few other peculiar cases. The origin of such anisotropic patterns may have various mechanisms or may also be due the specific details of the system and material such as the isotropic or anisotropic nature of the effective mass of electrons, the nature of the host substrate parameters, the nature of the interaction potentials, as well as other subtler effects. The interplay between all these factors can lead to many outcomes. In this work we consider small quantum Hall states of electrons at filling factor 1/6 and study the appearance of such anisotropic patterns as a result of some form of innate interaction anisotropy in the system.
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spelling doaj.art-ea2a2c0bbc964893a3a32bd9048cc65d2023-02-03T16:42:07ZengAIP Publishing LLCAIP Advances2158-32262023-01-01131015036015036-410.1063/9.0000394Quantum Hall effect systems of electrons with anisotropic patternsOrion Ciftja0Department of Physics, Prairie View A&M University, Prairie View, Texas 77446, USAAn almost ideal two-dimensional system of electrons can now be easily created in semiconductor heterojunctions. The quantum Hall effect state of the electrons is induced via the application of a strong perpendicular magnetic under specific quantum conditions. The most robust integer and/or fractional quantum Hall states already observed show the expected characteristic magnetoresistance for such systems. However, anisotropic patterns and features in transport properties have been seen for a few other peculiar cases. The origin of such anisotropic patterns may have various mechanisms or may also be due the specific details of the system and material such as the isotropic or anisotropic nature of the effective mass of electrons, the nature of the host substrate parameters, the nature of the interaction potentials, as well as other subtler effects. The interplay between all these factors can lead to many outcomes. In this work we consider small quantum Hall states of electrons at filling factor 1/6 and study the appearance of such anisotropic patterns as a result of some form of innate interaction anisotropy in the system.http://dx.doi.org/10.1063/9.0000394
spellingShingle Orion Ciftja
Quantum Hall effect systems of electrons with anisotropic patterns
AIP Advances
title Quantum Hall effect systems of electrons with anisotropic patterns
title_full Quantum Hall effect systems of electrons with anisotropic patterns
title_fullStr Quantum Hall effect systems of electrons with anisotropic patterns
title_full_unstemmed Quantum Hall effect systems of electrons with anisotropic patterns
title_short Quantum Hall effect systems of electrons with anisotropic patterns
title_sort quantum hall effect systems of electrons with anisotropic patterns
url http://dx.doi.org/10.1063/9.0000394
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