Phase Structure and Electrical Properties of Sm-Doped BiFe<sub>0.98</sub>Mn<sub>0.02</sub>O<sub>3</sub> Thin Films
Bi<sub>1</sub><sub>−x</sub>Sm<sub>x</sub>Fe<sub>0.</sub><sub>98</sub>Mn<sub>0</sub><sub>.02</sub>O<sub>3</sub> (x = 0, 0.02, 0.04, 0.06; named BSFMx) (BSFM) films were prepared by the sol-gel method on in...
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-12-01
|
| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/12/1/108 |
| _version_ | 1827668028899196928 |
|---|---|
| author | Yangyang Wang Zhaoyang Li Zhibiao Ma Lingxu Wang Xiaodong Guo Yan Liu Bingdong Yao Fengqing Zhang Luyi Zhu |
| author_facet | Yangyang Wang Zhaoyang Li Zhibiao Ma Lingxu Wang Xiaodong Guo Yan Liu Bingdong Yao Fengqing Zhang Luyi Zhu |
| author_sort | Yangyang Wang |
| collection | DOAJ |
| description | Bi<sub>1</sub><sub>−x</sub>Sm<sub>x</sub>Fe<sub>0.</sub><sub>98</sub>Mn<sub>0</sub><sub>.02</sub>O<sub>3</sub> (x = 0, 0.02, 0.04, 0.06; named BSFMx) (BSFM) films were prepared by the sol-gel method on indium tin oxide (ITO)/glass substrate. The effects of different Sm content on the crystal structure, phase composition, oxygen vacancy content, ferroelectric property, dielectric property, leakage property, leakage mechanism, and aging property of the BSFM films were systematically analyzed. X-ray diffraction (XRD) and Raman spectral analyses revealed that the sample had both R3c and Pnma phases. Through additional XRD fitting of the films, the content of the two phases of the sample was analyzed in detail, and it was found that the Pnma phase in the BSFMx = 0 film had the lowest abundance. X-ray photoelectron spectroscopy (XPS) analysis showed that the BSFMx = 0.04 film had the lowest oxygen vacancy content, which was conducive to a decrease in leakage current density and an improvement in dielectric properties. The diffraction peak of (110) exhibited the maximum intensity when the doping amount was 4 mol%, and the minimum leakage current density and a large remanent polarization intensity were also observed at room temperature (2Pr = 91.859 μC/cm<sup>2</sup>). By doping Sm at an appropriate amount, the leakage property of the BSFM films was reduced, the dielectric property was improved, and the aging process was delayed. The performance changes in the BSFM films were further explained from different perspectives, such as phase composition and oxygen vacancy content. |
| first_indexed | 2024-03-10T03:29:25Z |
| format | Article |
| id | doaj.art-ea72c1f7fbe849c6801eb1ff046d6b0b |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T03:29:25Z |
| publishDate | 2021-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-ea72c1f7fbe849c6801eb1ff046d6b0b2023-11-23T12:01:36ZengMDPI AGNanomaterials2079-49912021-12-0112110810.3390/nano12010108Phase Structure and Electrical Properties of Sm-Doped BiFe<sub>0.98</sub>Mn<sub>0.02</sub>O<sub>3</sub> Thin FilmsYangyang Wang0Zhaoyang Li1Zhibiao Ma2Lingxu Wang3Xiaodong Guo4Yan Liu5Bingdong Yao6Fengqing Zhang7Luyi Zhu8School of Materials Science and Engineering, Shandong Jianzhu University, Jinan 250101, ChinaState Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan 250100, ChinaSchool of Materials Science and Engineering, Shandong Jianzhu University, Jinan 250101, ChinaSchool of Materials Science and Engineering, Shandong Jianzhu University, Jinan 250101, ChinaSchool of Data and Computer Science, Shandong Women’s University, Jinan 250300, ChinaSchool of Materials Science and Engineering, Shandong Jianzhu University, Jinan 250101, ChinaSchool of Materials Science and Engineering, Shandong Jianzhu University, Jinan 250101, ChinaSchool of Materials Science and Engineering, Shandong Jianzhu University, Jinan 250101, ChinaState Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan 250100, ChinaBi<sub>1</sub><sub>−x</sub>Sm<sub>x</sub>Fe<sub>0.</sub><sub>98</sub>Mn<sub>0</sub><sub>.02</sub>O<sub>3</sub> (x = 0, 0.02, 0.04, 0.06; named BSFMx) (BSFM) films were prepared by the sol-gel method on indium tin oxide (ITO)/glass substrate. The effects of different Sm content on the crystal structure, phase composition, oxygen vacancy content, ferroelectric property, dielectric property, leakage property, leakage mechanism, and aging property of the BSFM films were systematically analyzed. X-ray diffraction (XRD) and Raman spectral analyses revealed that the sample had both R3c and Pnma phases. Through additional XRD fitting of the films, the content of the two phases of the sample was analyzed in detail, and it was found that the Pnma phase in the BSFMx = 0 film had the lowest abundance. X-ray photoelectron spectroscopy (XPS) analysis showed that the BSFMx = 0.04 film had the lowest oxygen vacancy content, which was conducive to a decrease in leakage current density and an improvement in dielectric properties. The diffraction peak of (110) exhibited the maximum intensity when the doping amount was 4 mol%, and the minimum leakage current density and a large remanent polarization intensity were also observed at room temperature (2Pr = 91.859 μC/cm<sup>2</sup>). By doping Sm at an appropriate amount, the leakage property of the BSFM films was reduced, the dielectric property was improved, and the aging process was delayed. The performance changes in the BSFM films were further explained from different perspectives, such as phase composition and oxygen vacancy content.https://www.mdpi.com/2079-4991/12/1/108BSFMphase transitionagingelectrical properties |
| spellingShingle | Yangyang Wang Zhaoyang Li Zhibiao Ma Lingxu Wang Xiaodong Guo Yan Liu Bingdong Yao Fengqing Zhang Luyi Zhu Phase Structure and Electrical Properties of Sm-Doped BiFe<sub>0.98</sub>Mn<sub>0.02</sub>O<sub>3</sub> Thin Films Nanomaterials BSFM phase transition aging electrical properties |
| title | Phase Structure and Electrical Properties of Sm-Doped BiFe<sub>0.98</sub>Mn<sub>0.02</sub>O<sub>3</sub> Thin Films |
| title_full | Phase Structure and Electrical Properties of Sm-Doped BiFe<sub>0.98</sub>Mn<sub>0.02</sub>O<sub>3</sub> Thin Films |
| title_fullStr | Phase Structure and Electrical Properties of Sm-Doped BiFe<sub>0.98</sub>Mn<sub>0.02</sub>O<sub>3</sub> Thin Films |
| title_full_unstemmed | Phase Structure and Electrical Properties of Sm-Doped BiFe<sub>0.98</sub>Mn<sub>0.02</sub>O<sub>3</sub> Thin Films |
| title_short | Phase Structure and Electrical Properties of Sm-Doped BiFe<sub>0.98</sub>Mn<sub>0.02</sub>O<sub>3</sub> Thin Films |
| title_sort | phase structure and electrical properties of sm doped bife sub 0 98 sub mn sub 0 02 sub o sub 3 sub thin films |
| topic | BSFM phase transition aging electrical properties |
| url | https://www.mdpi.com/2079-4991/12/1/108 |
| work_keys_str_mv | AT yangyangwang phasestructureandelectricalpropertiesofsmdopedbifesub098submnsub002subosub3subthinfilms AT zhaoyangli phasestructureandelectricalpropertiesofsmdopedbifesub098submnsub002subosub3subthinfilms AT zhibiaoma phasestructureandelectricalpropertiesofsmdopedbifesub098submnsub002subosub3subthinfilms AT lingxuwang phasestructureandelectricalpropertiesofsmdopedbifesub098submnsub002subosub3subthinfilms AT xiaodongguo phasestructureandelectricalpropertiesofsmdopedbifesub098submnsub002subosub3subthinfilms AT yanliu phasestructureandelectricalpropertiesofsmdopedbifesub098submnsub002subosub3subthinfilms AT bingdongyao phasestructureandelectricalpropertiesofsmdopedbifesub098submnsub002subosub3subthinfilms AT fengqingzhang phasestructureandelectricalpropertiesofsmdopedbifesub098submnsub002subosub3subthinfilms AT luyizhu phasestructureandelectricalpropertiesofsmdopedbifesub098submnsub002subosub3subthinfilms |