Controlled Synthesis of Tellurium Nanowires
One-dimensional tellurium nanostructures can exhibit distinct electronic properties from those seen in bulk Te. The electronic properties of nanostructured Te are highly dependent on their morphology, and thus controlled synthesis processes are required. Here, highly crystalline tellurium nanowires...
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-11-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/12/23/4137 |
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| author | Vladimir Miranda La Hera Xiuyu Wu Josué Mena Hamid Reza Barzegar Anumol Ashok Sergey Koroidov Thomas Wågberg Eduardo Gracia-Espino |
| author_facet | Vladimir Miranda La Hera Xiuyu Wu Josué Mena Hamid Reza Barzegar Anumol Ashok Sergey Koroidov Thomas Wågberg Eduardo Gracia-Espino |
| author_sort | Vladimir Miranda La Hera |
| collection | DOAJ |
| description | One-dimensional tellurium nanostructures can exhibit distinct electronic properties from those seen in bulk Te. The electronic properties of nanostructured Te are highly dependent on their morphology, and thus controlled synthesis processes are required. Here, highly crystalline tellurium nanowires were produced via physical vapour deposition. We used growth temperature, heating rate, flow of the carrier gas, and growth time to control the degree of supersaturation in the region where Te nanostructures are grown. The latter leads to a control in the nucleation and morphology of Te nanostructures. We observed that Te nanowires grow via the vapour–solid mechanism where a Te particle acts as a seed. Transmission electron microscopy (TEM) and electron diffraction studies revealed that Te nanowires have a trigonal crystal structure and grow along the (0001) direction. Their diameter can be tuned from 26 to 200 nm with lengths from 8.5 to 22 μm, where the highest aspect ratio of 327 was obtained for wires measuring 26 nm in diameter and 8.5 μm in length. We investigated the use of bismuth as an additive to reduce the formation of tellurium oxides, and we discuss the effect of other growth parameters. |
| first_indexed | 2024-03-09T17:39:12Z |
| format | Article |
| id | doaj.art-ea8a33c438ab44b08060197ae4a90943 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-09T17:39:12Z |
| publishDate | 2022-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-ea8a33c438ab44b08060197ae4a909432023-11-24T11:46:02ZengMDPI AGNanomaterials2079-49912022-11-011223413710.3390/nano12234137Controlled Synthesis of Tellurium NanowiresVladimir Miranda La Hera0Xiuyu Wu1Josué Mena2Hamid Reza Barzegar3Anumol Ashok4Sergey Koroidov5Thomas Wågberg6Eduardo Gracia-Espino7Department of Physics, Umeå University, 901 87 Umeå, SwedenDepartment of Physics, Umeå University, 901 87 Umeå, SwedenDepartment of Physics, Umeå University, 901 87 Umeå, SwedenDepartment of Physics, Umeå University, 901 87 Umeå, SwedenDepartment of Materials and Environmental Chemistry, Stockholm University, 106 91 Stockholm, SwedenDepartment of Physics, Stockholm University, 106 91 Stockholm, SwedenDepartment of Physics, Umeå University, 901 87 Umeå, SwedenDepartment of Physics, Umeå University, 901 87 Umeå, SwedenOne-dimensional tellurium nanostructures can exhibit distinct electronic properties from those seen in bulk Te. The electronic properties of nanostructured Te are highly dependent on their morphology, and thus controlled synthesis processes are required. Here, highly crystalline tellurium nanowires were produced via physical vapour deposition. We used growth temperature, heating rate, flow of the carrier gas, and growth time to control the degree of supersaturation in the region where Te nanostructures are grown. The latter leads to a control in the nucleation and morphology of Te nanostructures. We observed that Te nanowires grow via the vapour–solid mechanism where a Te particle acts as a seed. Transmission electron microscopy (TEM) and electron diffraction studies revealed that Te nanowires have a trigonal crystal structure and grow along the (0001) direction. Their diameter can be tuned from 26 to 200 nm with lengths from 8.5 to 22 μm, where the highest aspect ratio of 327 was obtained for wires measuring 26 nm in diameter and 8.5 μm in length. We investigated the use of bismuth as an additive to reduce the formation of tellurium oxides, and we discuss the effect of other growth parameters.https://www.mdpi.com/2079-4991/12/23/4137telluriumbismuthdopingnanowiresphysical vapour deposition |
| spellingShingle | Vladimir Miranda La Hera Xiuyu Wu Josué Mena Hamid Reza Barzegar Anumol Ashok Sergey Koroidov Thomas Wågberg Eduardo Gracia-Espino Controlled Synthesis of Tellurium Nanowires Nanomaterials tellurium bismuth doping nanowires physical vapour deposition |
| title | Controlled Synthesis of Tellurium Nanowires |
| title_full | Controlled Synthesis of Tellurium Nanowires |
| title_fullStr | Controlled Synthesis of Tellurium Nanowires |
| title_full_unstemmed | Controlled Synthesis of Tellurium Nanowires |
| title_short | Controlled Synthesis of Tellurium Nanowires |
| title_sort | controlled synthesis of tellurium nanowires |
| topic | tellurium bismuth doping nanowires physical vapour deposition |
| url | https://www.mdpi.com/2079-4991/12/23/4137 |
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