Numerical simulation of quantum dots as a buffer layer in CIGS solar cells: a comparative study
Abstract Quantum bandgap buffer layers can improve sunlight absorption in the short wavelength region, hence improving the performance of CIGS solar cells. In this study, we use numerical modelling to determine the impact of various buffer layers' electrical characteristics on the performance o...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2022-05-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-022-12234-0 |
| _version_ | 1811341133992689664 |
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| author | Zuhair R. Abdulghani Asmaa Soheil Najm Araa Mebdir Holi Asla Abdullah Al-Zahrani Khaled S. Al-Zahrani Hazim Moria |
| author_facet | Zuhair R. Abdulghani Asmaa Soheil Najm Araa Mebdir Holi Asla Abdullah Al-Zahrani Khaled S. Al-Zahrani Hazim Moria |
| author_sort | Zuhair R. Abdulghani |
| collection | DOAJ |
| description | Abstract Quantum bandgap buffer layers can improve sunlight absorption in the short wavelength region, hence improving the performance of CIGS solar cells. In this study, we use numerical modelling to determine the impact of various buffer layers' electrical characteristics on the performance of CIGS thin film photovoltaic devices, particularly, carrier concentration and the quantum effect. As well Ag2S buffer layer has been experimentally examined to fulfilment its effect in term of bulk and quantum bandgap. Experimental results depicted that, Ag2S QDs has polycrystalline nature of films, with smooth surface roughness, and average diameter 4 nm. Meanwhile, a simulation revealed that the Fermi level of the (n-buffer layer) material shifts closer to the conduction band with an increase in carrier concentration. The findings indicate that, a buffer layer with a wider bandgap and carrier concentration is an essential demand for achieving a device with a higher conversion efficiency and a broader bandgap-CBO window. It was attributed to beneficial synergistic effects of high carrier concentration and narrower depletion region, which enable carriers to overcome high CBO barrier. Most importantly, modelling results indicate that the optic-electrical characteristics of the buffer layer are critical in determining the progress of a CIGS solar cell. |
| first_indexed | 2024-04-13T18:53:12Z |
| format | Article |
| id | doaj.art-eaa7b725c9f84e99b1f77924cc03414f |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-04-13T18:53:12Z |
| publishDate | 2022-05-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-eaa7b725c9f84e99b1f77924cc03414f2022-12-22T02:34:22ZengNature PortfolioScientific Reports2045-23222022-05-0112111610.1038/s41598-022-12234-0Numerical simulation of quantum dots as a buffer layer in CIGS solar cells: a comparative studyZuhair R. Abdulghani0Asmaa Soheil Najm1Araa Mebdir Holi2Asla Abdullah Al-Zahrani3Khaled S. Al-Zahrani4Hazim Moria5Department of Mechanical Engineering Technology, Yanbu Industrial CollegeDepartment of Electrical Electronic and Systems Engineering, Faculty of Engineering and Built Environment, Universiti Kebangsaan Malaysia (UKM)Department of Physics, College of Education, University of Al-QadisiyahImam Abdulrahman Bin Faisal University, Eastern RegionDepartment of Mechanical Engineering Technology, Yanbu Industrial CollegeDepartment of Mechanical Engineering Technology, Yanbu Industrial CollegeAbstract Quantum bandgap buffer layers can improve sunlight absorption in the short wavelength region, hence improving the performance of CIGS solar cells. In this study, we use numerical modelling to determine the impact of various buffer layers' electrical characteristics on the performance of CIGS thin film photovoltaic devices, particularly, carrier concentration and the quantum effect. As well Ag2S buffer layer has been experimentally examined to fulfilment its effect in term of bulk and quantum bandgap. Experimental results depicted that, Ag2S QDs has polycrystalline nature of films, with smooth surface roughness, and average diameter 4 nm. Meanwhile, a simulation revealed that the Fermi level of the (n-buffer layer) material shifts closer to the conduction band with an increase in carrier concentration. The findings indicate that, a buffer layer with a wider bandgap and carrier concentration is an essential demand for achieving a device with a higher conversion efficiency and a broader bandgap-CBO window. It was attributed to beneficial synergistic effects of high carrier concentration and narrower depletion region, which enable carriers to overcome high CBO barrier. Most importantly, modelling results indicate that the optic-electrical characteristics of the buffer layer are critical in determining the progress of a CIGS solar cell.https://doi.org/10.1038/s41598-022-12234-0 |
| spellingShingle | Zuhair R. Abdulghani Asmaa Soheil Najm Araa Mebdir Holi Asla Abdullah Al-Zahrani Khaled S. Al-Zahrani Hazim Moria Numerical simulation of quantum dots as a buffer layer in CIGS solar cells: a comparative study Scientific Reports |
| title | Numerical simulation of quantum dots as a buffer layer in CIGS solar cells: a comparative study |
| title_full | Numerical simulation of quantum dots as a buffer layer in CIGS solar cells: a comparative study |
| title_fullStr | Numerical simulation of quantum dots as a buffer layer in CIGS solar cells: a comparative study |
| title_full_unstemmed | Numerical simulation of quantum dots as a buffer layer in CIGS solar cells: a comparative study |
| title_short | Numerical simulation of quantum dots as a buffer layer in CIGS solar cells: a comparative study |
| title_sort | numerical simulation of quantum dots as a buffer layer in cigs solar cells a comparative study |
| url | https://doi.org/10.1038/s41598-022-12234-0 |
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