Pixellated Perovskite Photodiode on IGZO Thin Film Transistor Backplane for Low Dose Indirect X-Ray Detection
The integration of perovskite photodetectors with thin-film transistor (TFT) backplane or complementary metal-oxide-semiconductor CMOS circuit is a key step towards prototyping perovskite-based image sensors. Here, we demonstrate a pixel configuration for indirect X-ray detection comprising of IGZO...
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IEEE
2021-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/9272303/ |
| _version_ | 1798033066798612480 |
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| author | Taoyu Zou Ben Xiang Yangbing Xu Ya Wang Chuan Liu Jun Chen Kai Wang Qing Dai Shengdong Zhang Yong-Young Noh Hang Zhou |
| author_facet | Taoyu Zou Ben Xiang Yangbing Xu Ya Wang Chuan Liu Jun Chen Kai Wang Qing Dai Shengdong Zhang Yong-Young Noh Hang Zhou |
| author_sort | Taoyu Zou |
| collection | DOAJ |
| description | The integration of perovskite photodetectors with thin-film transistor (TFT) backplane or complementary metal-oxide-semiconductor CMOS circuit is a key step towards prototyping perovskite-based image sensors. Here, we demonstrate a pixel configuration for indirect X-ray detection comprising of IGZO TFTs and perovskite photodiodes (PDs). The perovskite photodiode is patterned by a two-step deposition method. Our integrated TFT/PD pixel shows a weak light detection capability down to 4 nW cm<sup>−2</sup> and a fast-transient response to the pulse light and gate switching. Combining with a CsI scintillator, the integrated pixel achieves a specific X-ray sensitivity of 8.2 <inline-formula> <tex-math notation="LaTeX">$8.2 \times 10^{2} \mu \mathrm{C} \mathrm{mGy}_{\text {air }}^{-1} \mathrm{~cm}^{-3}$ </tex-math></inline-formula>. Theoretically, with a state-of-the-art scintillator, the new pixel can provide a detectable signal for X-ray imaging at a dose rate as low as <inline-formula> <tex-math notation="LaTeX">$10 \mu \mathrm{Gy}_{\text {air }} \mathrm{s}^{-1}$ </tex-math></inline-formula>. This work provides an advanced pixel design for high resolution, high sensitivity, and high frame-rate flat-panel imager. |
| first_indexed | 2024-04-11T20:23:14Z |
| format | Article |
| id | doaj.art-eabf6b8e1d444bff958a619a8682dc4b |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-04-11T20:23:14Z |
| publishDate | 2021-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-eabf6b8e1d444bff958a619a8682dc4b2022-12-22T04:04:45ZengIEEEIEEE Journal of the Electron Devices Society2168-67342021-01-0199610110.1109/JEDS.2020.30407719272303Pixellated Perovskite Photodiode on IGZO Thin Film Transistor Backplane for Low Dose Indirect X-Ray DetectionTaoyu Zou0Ben Xiang1Yangbing Xu2https://orcid.org/0000-0003-0306-8687Ya Wang3Chuan Liu4https://orcid.org/0000-0002-0695-592XJun Chen5https://orcid.org/0000-0001-7397-2714Kai Wang6https://orcid.org/0000-0003-2006-5760Qing Dai7https://orcid.org/0000-0002-1750-0867Shengdong Zhang8https://orcid.org/0000-0002-1815-8661Yong-Young Noh9https://orcid.org/0000-0001-7222-2401Hang Zhou10https://orcid.org/0000-0002-0472-9515School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen, ChinaSchool of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen, ChinaState Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, ChinaSchool of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen, ChinaState Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, ChinaState Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, ChinaState Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, ChinaDivision of Nanophotonics, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, ChinaSchool of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen, ChinaDepartment of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, South KoreaSchool of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen, ChinaThe integration of perovskite photodetectors with thin-film transistor (TFT) backplane or complementary metal-oxide-semiconductor CMOS circuit is a key step towards prototyping perovskite-based image sensors. Here, we demonstrate a pixel configuration for indirect X-ray detection comprising of IGZO TFTs and perovskite photodiodes (PDs). The perovskite photodiode is patterned by a two-step deposition method. Our integrated TFT/PD pixel shows a weak light detection capability down to 4 nW cm<sup>−2</sup> and a fast-transient response to the pulse light and gate switching. Combining with a CsI scintillator, the integrated pixel achieves a specific X-ray sensitivity of 8.2 <inline-formula> <tex-math notation="LaTeX">$8.2 \times 10^{2} \mu \mathrm{C} \mathrm{mGy}_{\text {air }}^{-1} \mathrm{~cm}^{-3}$ </tex-math></inline-formula>. Theoretically, with a state-of-the-art scintillator, the new pixel can provide a detectable signal for X-ray imaging at a dose rate as low as <inline-formula> <tex-math notation="LaTeX">$10 \mu \mathrm{Gy}_{\text {air }} \mathrm{s}^{-1}$ </tex-math></inline-formula>. This work provides an advanced pixel design for high resolution, high sensitivity, and high frame-rate flat-panel imager.https://ieeexplore.ieee.org/document/9272303/Flat-panel imagerIGZOperovskitethin-film transistorsX-ray detectors |
| spellingShingle | Taoyu Zou Ben Xiang Yangbing Xu Ya Wang Chuan Liu Jun Chen Kai Wang Qing Dai Shengdong Zhang Yong-Young Noh Hang Zhou Pixellated Perovskite Photodiode on IGZO Thin Film Transistor Backplane for Low Dose Indirect X-Ray Detection IEEE Journal of the Electron Devices Society Flat-panel imager IGZO perovskite thin-film transistors X-ray detectors |
| title | Pixellated Perovskite Photodiode on IGZO Thin Film Transistor Backplane for Low Dose Indirect X-Ray Detection |
| title_full | Pixellated Perovskite Photodiode on IGZO Thin Film Transistor Backplane for Low Dose Indirect X-Ray Detection |
| title_fullStr | Pixellated Perovskite Photodiode on IGZO Thin Film Transistor Backplane for Low Dose Indirect X-Ray Detection |
| title_full_unstemmed | Pixellated Perovskite Photodiode on IGZO Thin Film Transistor Backplane for Low Dose Indirect X-Ray Detection |
| title_short | Pixellated Perovskite Photodiode on IGZO Thin Film Transistor Backplane for Low Dose Indirect X-Ray Detection |
| title_sort | pixellated perovskite photodiode on igzo thin film transistor backplane for low dose indirect x ray detection |
| topic | Flat-panel imager IGZO perovskite thin-film transistors X-ray detectors |
| url | https://ieeexplore.ieee.org/document/9272303/ |
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