| Summary: | Sheet resistance (R<sub>sheet</sub>) reduction of a-few-layered molybdenum disulfide (MoS<sub>2</sub>) film using sputtering is investigated in this study. To enhance the carrier density, chlorine (Cl2) gas excited by inductively coupled plasma is introduced as a substitute for sulfur. To electrically activate the Cl dopants and simultaneously prevent out-diffusion of sulfur, a furnace annealing was performed in sulfur-vapor ambient. Consequently, the R<sub>sheet</sub> in the MoS<sub>2</sub> film with the Cl<sub>2</sub> plasma treatment remarkably reduced by one order lower than that without one, because of the activation of Cl dopants in the MoS<sub>2</sub> film.
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