Sheet Resistance Reduction of MoS₂ Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing
Sheet resistance (R<sub>sheet</sub>) reduction of a-few-layered molybdenum disulfide (MoS<sub>2</sub>) film using sputtering is investigated in this study. To enhance the carrier density, chlorine (Cl2) gas excited by inductively coupled plasma is introduced as a substitute f...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9319671/ |
| _version_ | 1819139646828838912 |
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| author | Takuya Hamada Shigetaka Tomiya Tetsuya Tatsumi Masaya Hamada Taiga Horiguchi Kuniyuki Kakushima Kazuo Tsutsui Hitoshi Wakabayashi |
| author_facet | Takuya Hamada Shigetaka Tomiya Tetsuya Tatsumi Masaya Hamada Taiga Horiguchi Kuniyuki Kakushima Kazuo Tsutsui Hitoshi Wakabayashi |
| author_sort | Takuya Hamada |
| collection | DOAJ |
| description | Sheet resistance (R<sub>sheet</sub>) reduction of a-few-layered molybdenum disulfide (MoS<sub>2</sub>) film using sputtering is investigated in this study. To enhance the carrier density, chlorine (Cl2) gas excited by inductively coupled plasma is introduced as a substitute for sulfur. To electrically activate the Cl dopants and simultaneously prevent out-diffusion of sulfur, a furnace annealing was performed in sulfur-vapor ambient. Consequently, the R<sub>sheet</sub> in the MoS<sub>2</sub> film with the Cl<sub>2</sub> plasma treatment remarkably reduced by one order lower than that without one, because of the activation of Cl dopants in the MoS<sub>2</sub> film. |
| first_indexed | 2024-12-22T11:25:59Z |
| format | Article |
| id | doaj.art-eb330459f5684d7a8f71012dc822f8c8 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-22T11:25:59Z |
| publishDate | 2021-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-eb330459f5684d7a8f71012dc822f8c82022-12-21T18:27:45ZengIEEEIEEE Journal of the Electron Devices Society2168-67342021-01-01927828510.1109/JEDS.2021.30508019319671Sheet Resistance Reduction of MoS₂ Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor AnnealingTakuya Hamada0https://orcid.org/0000-0003-3648-7677Shigetaka Tomiya1Tetsuya Tatsumi2Masaya Hamada3https://orcid.org/0000-0002-5830-5283Taiga Horiguchi4Kuniyuki Kakushima5Kazuo Tsutsui6https://orcid.org/0000-0002-5472-5539Hitoshi Wakabayashi7https://orcid.org/0000-0001-5509-521XDepartment of Electrical and Electronic Engineering, School of Engineering, Tokyo Institute of Technology (Suzukakedai Campus), Yokohama, JapanResearch Institute for the Earth Inclusive Sensing, Tokyo Institute of Technology (Suzukakedai Campus), Yokohama, JapanResearch Institute for the Earth Inclusive Sensing, Tokyo Institute of Technology (Suzukakedai Campus), Yokohama, JapanDepartment of Electrical and Electronic Engineering, School of Engineering, Tokyo Institute of Technology (Suzukakedai Campus), Yokohama, JapanDepartment of Electrical and Electronic Engineering, School of Engineering, Tokyo Institute of Technology (Suzukakedai Campus), Yokohama, JapanTokyo Institute of Technology, Yokohama, JapanInterdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama, JapanDepartment of Electrical and Electronic Engineering, School of Engineering, Tokyo Institute of Technology (Suzukakedai Campus), Yokohama, JapanSheet resistance (R<sub>sheet</sub>) reduction of a-few-layered molybdenum disulfide (MoS<sub>2</sub>) film using sputtering is investigated in this study. To enhance the carrier density, chlorine (Cl2) gas excited by inductively coupled plasma is introduced as a substitute for sulfur. To electrically activate the Cl dopants and simultaneously prevent out-diffusion of sulfur, a furnace annealing was performed in sulfur-vapor ambient. Consequently, the R<sub>sheet</sub> in the MoS<sub>2</sub> film with the Cl<sub>2</sub> plasma treatment remarkably reduced by one order lower than that without one, because of the activation of Cl dopants in the MoS<sub>2</sub> film.https://ieeexplore.ieee.org/document/9319671/Activation annealingchlorine plasmamolybdenum disulfide (MoS₂)radio-frequency magnetron sputteringtransition metal dichalcogenide (TMDC) |
| spellingShingle | Takuya Hamada Shigetaka Tomiya Tetsuya Tatsumi Masaya Hamada Taiga Horiguchi Kuniyuki Kakushima Kazuo Tsutsui Hitoshi Wakabayashi Sheet Resistance Reduction of MoS₂ Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing IEEE Journal of the Electron Devices Society Activation annealing chlorine plasma molybdenum disulfide (MoS₂) radio-frequency magnetron sputtering transition metal dichalcogenide (TMDC) |
| title | Sheet Resistance Reduction of MoS₂ Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing |
| title_full | Sheet Resistance Reduction of MoS₂ Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing |
| title_fullStr | Sheet Resistance Reduction of MoS₂ Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing |
| title_full_unstemmed | Sheet Resistance Reduction of MoS₂ Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing |
| title_short | Sheet Resistance Reduction of MoS₂ Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing |
| title_sort | sheet resistance reduction of mos x2082 film using sputtering and chlorine plasma treatment followed by sulfur vapor annealing |
| topic | Activation annealing chlorine plasma molybdenum disulfide (MoS₂) radio-frequency magnetron sputtering transition metal dichalcogenide (TMDC) |
| url | https://ieeexplore.ieee.org/document/9319671/ |
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