Thermal Performance of Cu Electroplated GaN/AlGaN High-Electron-Mobility Transistors with Various-Thickness Si Substrates
Thermal dissipation is an important issue for power devices. In this work, the impact of thermal effects on the performance of Cu electroplated GaN-based high-electron-mobility transistors (HEMTs) are considered. Electrical, thermometry and micro-Raman characterization techniques were used to correl...
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| Format: | Article |
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MDPI AG
2023-04-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/12/9/2033 |
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| author | Ray-Hua Horng Hsiao-Yun Yeh Niall Tumilty |
| author_facet | Ray-Hua Horng Hsiao-Yun Yeh Niall Tumilty |
| author_sort | Ray-Hua Horng |
| collection | DOAJ |
| description | Thermal dissipation is an important issue for power devices. In this work, the impact of thermal effects on the performance of Cu electroplated GaN-based high-electron-mobility transistors (HEMTs) are considered. Electrical, thermometry and micro-Raman characterization techniques were used to correlate the effects of improved heat dissipation on device performance for GaN HEMTs with different thicknesses of Si substrate (50, 100, 150 μm), with and without an additional electroplated Cu layer. GaN HEMTs on electroplated Cu on Si (≤50 μm) demonstrate an enhanced on/off current ratio compared to bare Si substrate by a factor of ~400 (from 9.61 × 10<sup>5</sup> to 4.03 × 10<sup>8</sup>). Of particular importance, surface temperature measurements reveal a much lower channel temperature for thinner HEMT devices with electroplated Cu samples compared to those without. |
| first_indexed | 2024-03-11T04:21:40Z |
| format | Article |
| id | doaj.art-eb4d0deec1a6478295bfb1f282ab6eb4 |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-11T04:21:40Z |
| publishDate | 2023-04-01 |
| publisher | MDPI AG |
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| series | Electronics |
| spelling | doaj.art-eb4d0deec1a6478295bfb1f282ab6eb42023-11-17T22:47:47ZengMDPI AGElectronics2079-92922023-04-01129203310.3390/electronics12092033Thermal Performance of Cu Electroplated GaN/AlGaN High-Electron-Mobility Transistors with Various-Thickness Si SubstratesRay-Hua Horng0Hsiao-Yun Yeh1Niall Tumilty2Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, TaiwanInstitute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, TaiwanInternational College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, TaiwanThermal dissipation is an important issue for power devices. In this work, the impact of thermal effects on the performance of Cu electroplated GaN-based high-electron-mobility transistors (HEMTs) are considered. Electrical, thermometry and micro-Raman characterization techniques were used to correlate the effects of improved heat dissipation on device performance for GaN HEMTs with different thicknesses of Si substrate (50, 100, 150 μm), with and without an additional electroplated Cu layer. GaN HEMTs on electroplated Cu on Si (≤50 μm) demonstrate an enhanced on/off current ratio compared to bare Si substrate by a factor of ~400 (from 9.61 × 10<sup>5</sup> to 4.03 × 10<sup>8</sup>). Of particular importance, surface temperature measurements reveal a much lower channel temperature for thinner HEMT devices with electroplated Cu samples compared to those without.https://www.mdpi.com/2079-9292/12/9/2033GaNHEMTcopper electroplatingRaman thermometry |
| spellingShingle | Ray-Hua Horng Hsiao-Yun Yeh Niall Tumilty Thermal Performance of Cu Electroplated GaN/AlGaN High-Electron-Mobility Transistors with Various-Thickness Si Substrates Electronics GaN HEMT copper electroplating Raman thermometry |
| title | Thermal Performance of Cu Electroplated GaN/AlGaN High-Electron-Mobility Transistors with Various-Thickness Si Substrates |
| title_full | Thermal Performance of Cu Electroplated GaN/AlGaN High-Electron-Mobility Transistors with Various-Thickness Si Substrates |
| title_fullStr | Thermal Performance of Cu Electroplated GaN/AlGaN High-Electron-Mobility Transistors with Various-Thickness Si Substrates |
| title_full_unstemmed | Thermal Performance of Cu Electroplated GaN/AlGaN High-Electron-Mobility Transistors with Various-Thickness Si Substrates |
| title_short | Thermal Performance of Cu Electroplated GaN/AlGaN High-Electron-Mobility Transistors with Various-Thickness Si Substrates |
| title_sort | thermal performance of cu electroplated gan algan high electron mobility transistors with various thickness si substrates |
| topic | GaN HEMT copper electroplating Raman thermometry |
| url | https://www.mdpi.com/2079-9292/12/9/2033 |
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