Evaluation of the Thermal Resistance in GaN HEMTs Using Thermo-Sensitive Electrical Parameters
The thermal management of power converters is not only crucial for their own optimal operation and reliability, but also for the overall system in which they are operating. Reliability is a very serious aspect because power electronics systems are being increasingly widely adopted in mission-critica...
Main Authors: | Adrian Valeriu Pirosca, Marcello Vecchio, Santi Agatino Rizzo, Francesco Iannuzzo |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2023-03-01
|
Series: | Energies |
Subjects: | |
Online Access: | https://www.mdpi.com/1996-1073/16/6/2779 |
Similar Items
-
Diamond/GaN HEMTs: Where from and Where to?
by: Joana C. Mendes, et al.
Published: (2022-01-01) -
Research Progress and Development Prospects of Enhanced GaN HEMTs
by: Lili Han, et al.
Published: (2023-06-01) -
Circuit Models of Power MOSFETs Leading the Way of GaN HEMT Modelling—A Review
by: Enrico Bottaro, et al.
Published: (2022-05-01) -
Gate Current in p-GaN Gate HEMTs as a Channel Temperature Sensitive Parameter: A Comparative Study between Schottky- and Ohmic-Gate GaN HEMTs
by: Alessandro Borghese, et al.
Published: (2021-12-01) -
Evaluation and Reliability Assessment of GaN-on-Si MIS-HEMT for Power Switching Applications
by: Po-Chien Chou, et al.
Published: (2017-02-01)