Near-Infrared Photoresponse in Ge/Si Quantum Dots Enhanced by Photon-Trapping Hole Arrays
Group-IV photonic devices that contain Si and Ge are very attractive due to their compatibility with integrated silicon photonics platforms. Despite the recent progress in fabrication of Ge/Si quantum dot (QD) photodetectors, their low quantum efficiency still remains a major challenge and different...
Main Authors: | Andrew I. Yakimov, Victor V. Kirienko, Aleksei A. Bloshkin, Dmitrii E. Utkin, Anatoly V. Dvurechenskii |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-09-01
|
Series: | Nanomaterials |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-4991/11/9/2302 |
Similar Items
-
Angle-Selective Photodetection in Ge/Si Quantum Dot Photodiodes Enhanced by Microstructured Hole Arrays
by: Andrew I. Yakimov, et al.
Published: (2023-07-01) -
Light-Trapping-Enhanced Photodetection in Ge/Si Quantum Dot Photodiodes Containing Microhole Arrays with Different Hole Depths
by: Andrew I. Yakimov, et al.
Published: (2022-08-01) -
Magneto-Optical Characterization of Trions in Symmetric InP-Based Quantum Dots for Quantum Communication Applications
by: Wojciech Rudno-Rudziński, et al.
Published: (2021-02-01) -
Electromodulated reflectance study of self-assembled Ge/Si quantum dots
by: Yakimov Andrew, et al.
Published: (2011-01-01) -
Unveiling the electronic structure of GaSb/AlGaSb quantum dots emitting in the third telecom window
by: Lucie Leguay, et al.
Published: (2024-01-01)