Schottky Barrier Height Engineering of Ti/n-Type Silicon Diode by Means of Ion Implantation
Herein, boron implantation technique was employed to engineer the Schottky barrier height (SBH) of Ti/n-type silicon junction (Ti/n-Si). The Ti/n-Si Schottky diodes with boron doses of 4, 5.4 and 6.6´1012 cm-2 at the energy of 25 keV were fabricated with improved rectification and their effective SB...
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| Format: | Article |
| Language: | English |
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Walailak University
2018-11-01
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| Series: | Walailak Journal of Science and Technology |
| Subjects: | |
| Online Access: | http://wjst.wu.ac.th/index.php/wjst/article/view/5968 |
| _version_ | 1811274730644176896 |
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| author | Doldet TANTRAVIWAT Wittawat YAMWONG Udom TECHAKIJKAJORN Kazuo IMAI Burapat INCEESUNGVORN |
| author_facet | Doldet TANTRAVIWAT Wittawat YAMWONG Udom TECHAKIJKAJORN Kazuo IMAI Burapat INCEESUNGVORN |
| author_sort | Doldet TANTRAVIWAT |
| collection | DOAJ |
| description | Herein, boron implantation technique was employed to engineer the Schottky barrier height (SBH) of Ti/n-type silicon junction (Ti/n-Si). The Ti/n-Si Schottky diodes with boron doses of 4, 5.4 and 6.6´1012 cm-2 at the energy of 25 keV were fabricated with improved rectification and their effective SBHs increased from 0.49 to 0.95. The tuning of the effective SBH is mainly attributed to the presence of shallow p-layer, which modifies the energy band at Ti/n-Si interface. This work clearly shows that the ability to precisely control the SBH, regardless of the metal work function, would facilitate the implementation of Schottky diode into various semiconductor structures, such as MPS (Merged PiN Schottky) diode, in order to improve performance without major modification on the existing metal line process. |
| first_indexed | 2024-04-12T23:25:30Z |
| format | Article |
| id | doaj.art-ebee036038ff4b3190fde99f3aa1a946 |
| institution | Directory Open Access Journal |
| issn | 1686-3933 2228-835X |
| language | English |
| last_indexed | 2024-04-12T23:25:30Z |
| publishDate | 2018-11-01 |
| publisher | Walailak University |
| record_format | Article |
| series | Walailak Journal of Science and Technology |
| spelling | doaj.art-ebee036038ff4b3190fde99f3aa1a9462022-12-22T03:12:26ZengWalailak UniversityWalailak Journal of Science and Technology1686-39332228-835X2018-11-01151110.14456/vol15iss12ppCorrected ProofSchottky Barrier Height Engineering of Ti/n-Type Silicon Diode by Means of Ion ImplantationDoldet TANTRAVIWAT0Wittawat YAMWONG1Udom TECHAKIJKAJORN2Kazuo IMAI3Burapat INCEESUNGVORN4Department of Electrical Engineering, Faculty of Engineering, Chiang Mai University, Chiang Mai 50200Thai Microelectronics Center (TMEC), National Electronics and Computer Technology Center, Chachoengsao 24000Thai Microelectronics Center (TMEC), National Electronics and Computer Technology Center, Chachoengsao 24000Thai Microelectronics Center (TMEC), National Electronics and Computer Technology Center, Chachoengsao 24000Department of Chemistry, Faculty of Science, Chiang Mai University, Chiang Mai 50200Herein, boron implantation technique was employed to engineer the Schottky barrier height (SBH) of Ti/n-type silicon junction (Ti/n-Si). The Ti/n-Si Schottky diodes with boron doses of 4, 5.4 and 6.6´1012 cm-2 at the energy of 25 keV were fabricated with improved rectification and their effective SBHs increased from 0.49 to 0.95. The tuning of the effective SBH is mainly attributed to the presence of shallow p-layer, which modifies the energy band at Ti/n-Si interface. This work clearly shows that the ability to precisely control the SBH, regardless of the metal work function, would facilitate the implementation of Schottky diode into various semiconductor structures, such as MPS (Merged PiN Schottky) diode, in order to improve performance without major modification on the existing metal line process.http://wjst.wu.ac.th/index.php/wjst/article/view/5968Schottky diodeSchottky barrier engineeringshallow implantationtitanium |
| spellingShingle | Doldet TANTRAVIWAT Wittawat YAMWONG Udom TECHAKIJKAJORN Kazuo IMAI Burapat INCEESUNGVORN Schottky Barrier Height Engineering of Ti/n-Type Silicon Diode by Means of Ion Implantation Walailak Journal of Science and Technology Schottky diode Schottky barrier engineering shallow implantation titanium |
| title | Schottky Barrier Height Engineering of Ti/n-Type Silicon Diode by Means of Ion Implantation |
| title_full | Schottky Barrier Height Engineering of Ti/n-Type Silicon Diode by Means of Ion Implantation |
| title_fullStr | Schottky Barrier Height Engineering of Ti/n-Type Silicon Diode by Means of Ion Implantation |
| title_full_unstemmed | Schottky Barrier Height Engineering of Ti/n-Type Silicon Diode by Means of Ion Implantation |
| title_short | Schottky Barrier Height Engineering of Ti/n-Type Silicon Diode by Means of Ion Implantation |
| title_sort | schottky barrier height engineering of ti n type silicon diode by means of ion implantation |
| topic | Schottky diode Schottky barrier engineering shallow implantation titanium |
| url | http://wjst.wu.ac.th/index.php/wjst/article/view/5968 |
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