Graphene Quantum Dots as an Oxygen Reservoir for Topotactic Phase Transition‐Based Memristive Devices
Abstract A novel class of transition metal oxides, capable of reversible topotactic phase transition between the oxygen‐deficient brownmillerite and oxygen‐rich perovskite, has emerged as a promising material for memristive and magnetoelectric devices. However, the absence of a local oxygen source i...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2023-11-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202300401 |
| _version_ | 1797632594205999104 |
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| author | Venkata Raveendra Nallagatla Harisankar Sasindra Hyoung Gyun Kim Dongha Yoo Gyu‐Chul Yi Miyoung Kim Chang Uk Jung |
| author_facet | Venkata Raveendra Nallagatla Harisankar Sasindra Hyoung Gyun Kim Dongha Yoo Gyu‐Chul Yi Miyoung Kim Chang Uk Jung |
| author_sort | Venkata Raveendra Nallagatla |
| collection | DOAJ |
| description | Abstract A novel class of transition metal oxides, capable of reversible topotactic phase transition between the oxygen‐deficient brownmillerite and oxygen‐rich perovskite, has emerged as a promising material for memristive and magnetoelectric devices. However, the absence of a local oxygen source in the device structure necessitates an oxygen exchange process between the surrounding atmosphere and the switching layer during operation, which can lead to unreliable device performance. In this study, graphene quantum dots (GQDs) are introduced into a SrFe0.5Co0.5Ox memristive device as an oxygen reservoir for the nanoscale topotactic redox process. The SrFe0.5Co0.5Ox memristive devices with GQDs exhibit reliable resistive switching performance compared to SrFe0.5Co0.5Ox devices without GQDs. To understand the effect of GQDs on the device structure, a pulse endurance test is carried out in a high vacuum. The devices with GQDs show rather good endurance behavior, while devices without GQDs exhibit endurance failure. These results provide a deeper understanding of the potential use of GQDs in enhancing the performance of SrFe0.5Co0.5Ox memristive devices, with implications for tuning nanoscale topotactic phase transition for multi‐functional properties. |
| first_indexed | 2024-03-11T11:40:04Z |
| format | Article |
| id | doaj.art-ec04e898422246fca7d16a6c7b264824 |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-11T11:40:04Z |
| publishDate | 2023-11-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-ec04e898422246fca7d16a6c7b2648242023-11-10T08:29:50ZengWiley-VCHAdvanced Electronic Materials2199-160X2023-11-01911n/an/a10.1002/aelm.202300401Graphene Quantum Dots as an Oxygen Reservoir for Topotactic Phase Transition‐Based Memristive DevicesVenkata Raveendra Nallagatla0Harisankar Sasindra1Hyoung Gyun Kim2Dongha Yoo3Gyu‐Chul Yi4Miyoung Kim5Chang Uk Jung6Department of Physics and Memory and Catalyst Research Center Hankuk University of Foreign Studies Yongin 17035 South KoreaDepartment of Physics and Memory and Catalyst Research Center Hankuk University of Foreign Studies Yongin 17035 South KoreaDepartment of Material Science and Engineering and Research Institute of Advanced Materials Seoul National University Seoul 151‐747 South KoreaDepartment of Physics and Astronomy and Institute of Applied Physics Seoul National University Seoul 08826 South KoreaDepartment of Physics and Astronomy and Institute of Applied Physics Seoul National University Seoul 08826 South KoreaDepartment of Material Science and Engineering and Research Institute of Advanced Materials Seoul National University Seoul 151‐747 South KoreaDepartment of Physics and Memory and Catalyst Research Center Hankuk University of Foreign Studies Yongin 17035 South KoreaAbstract A novel class of transition metal oxides, capable of reversible topotactic phase transition between the oxygen‐deficient brownmillerite and oxygen‐rich perovskite, has emerged as a promising material for memristive and magnetoelectric devices. However, the absence of a local oxygen source in the device structure necessitates an oxygen exchange process between the surrounding atmosphere and the switching layer during operation, which can lead to unreliable device performance. In this study, graphene quantum dots (GQDs) are introduced into a SrFe0.5Co0.5Ox memristive device as an oxygen reservoir for the nanoscale topotactic redox process. The SrFe0.5Co0.5Ox memristive devices with GQDs exhibit reliable resistive switching performance compared to SrFe0.5Co0.5Ox devices without GQDs. To understand the effect of GQDs on the device structure, a pulse endurance test is carried out in a high vacuum. The devices with GQDs show rather good endurance behavior, while devices without GQDs exhibit endurance failure. These results provide a deeper understanding of the potential use of GQDs in enhancing the performance of SrFe0.5Co0.5Ox memristive devices, with implications for tuning nanoscale topotactic phase transition for multi‐functional properties.https://doi.org/10.1002/aelm.202300401epitaxial thin filmsgraphene quantum dotsmemristive behaviorsoxygen reservoirstopotactic phase transitions |
| spellingShingle | Venkata Raveendra Nallagatla Harisankar Sasindra Hyoung Gyun Kim Dongha Yoo Gyu‐Chul Yi Miyoung Kim Chang Uk Jung Graphene Quantum Dots as an Oxygen Reservoir for Topotactic Phase Transition‐Based Memristive Devices Advanced Electronic Materials epitaxial thin films graphene quantum dots memristive behaviors oxygen reservoirs topotactic phase transitions |
| title | Graphene Quantum Dots as an Oxygen Reservoir for Topotactic Phase Transition‐Based Memristive Devices |
| title_full | Graphene Quantum Dots as an Oxygen Reservoir for Topotactic Phase Transition‐Based Memristive Devices |
| title_fullStr | Graphene Quantum Dots as an Oxygen Reservoir for Topotactic Phase Transition‐Based Memristive Devices |
| title_full_unstemmed | Graphene Quantum Dots as an Oxygen Reservoir for Topotactic Phase Transition‐Based Memristive Devices |
| title_short | Graphene Quantum Dots as an Oxygen Reservoir for Topotactic Phase Transition‐Based Memristive Devices |
| title_sort | graphene quantum dots as an oxygen reservoir for topotactic phase transition based memristive devices |
| topic | epitaxial thin films graphene quantum dots memristive behaviors oxygen reservoirs topotactic phase transitions |
| url | https://doi.org/10.1002/aelm.202300401 |
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