UNELE PROPRIETĂŢI OPTICE ALE STRATURILOR SUBŢIRI DE GaSe ŞI GaS DOPATE CU Cu
GaS and GaSe doped with Cu thin films have been deposited by "flash" evaporation. The thickness of the layers varied from 138 to 1450 nm. The absorption spectra in the fundamental band edge region have been studied. The optical band gap has been determined as follows: 2.42 eV for GaS (Cu)...
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| Format: | Article |
| Language: | English |
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Moldova State University
2007-01-01
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| Series: | Studia Universitatis Moldaviae: Stiinte reale si ale naturii |
| Online Access: | https://ojs.studiamsu.md/index.php/stiinte_reale_naturii/article/view/70 |
| Summary: | GaS and GaSe doped with Cu thin films have been deposited by "flash" evaporation. The thickness of the layers varied from 138 to 1450 nm. The absorption spectra in the fundamental band edge region have been studied. The optical band gap has been determined as follows: 2.42 eV for GaS (Cu) and 1.92 eV for GaSe (Cu). The fabrication temperature for obtaining amorphous and nanocrystalline GaSe has been determined as 390 K and 623 K respectively.
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| ISSN: | 1814-3237 1857-498X |