Electrical characterization of MIM capacitor comprises an adamantane film at room temperature
We fabricated a new metal-insulator-metal capacitor at room temperature, comprising a ∼90 nm thin low–k adamantane film on a Si substrate. The surface morphology of deposited organic film was investigated by using scanning electron microscopy and Raman spectroscopy, which is confirmed that the adama...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2016-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4954807 |
| _version_ | 1819326939147534336 |
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| author | Rajanish N. Tiwari Masamichi Yoshimura |
| author_facet | Rajanish N. Tiwari Masamichi Yoshimura |
| author_sort | Rajanish N. Tiwari |
| collection | DOAJ |
| description | We fabricated a new metal-insulator-metal capacitor at room temperature, comprising a ∼90 nm thin low–k adamantane film on a Si substrate. The surface morphology of deposited organic film was investigated by using scanning electron microscopy and Raman spectroscopy, which is confirmed that the adamantane thin film was uniformly distributed on the Si surface. The adamantane film exhibits a low leakage current density of 7.4 x 10−7 A/cm2 at 13.5 V, better capacitance density of 2.14 fF/μm2 at 100 KHz. |
| first_indexed | 2024-12-24T13:02:54Z |
| format | Article |
| id | doaj.art-ec0c4aff5129438fa96f27954ccfeeb1 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-24T13:02:54Z |
| publishDate | 2016-06-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-ec0c4aff5129438fa96f27954ccfeeb12022-12-21T16:54:07ZengAIP Publishing LLCAIP Advances2158-32262016-06-0166065120065120-510.1063/1.4954807078606ADVElectrical characterization of MIM capacitor comprises an adamantane film at room temperatureRajanish N. Tiwari0Masamichi Yoshimura1Department of Physics and Astronomical Sciences, Central University of Himachal Pradesh, Dharmshala 176206 Kangra, H.P. IndiaDepartment of Physics and Astronomical Sciences, Central University of Himachal Pradesh, Dharmshala 176206 Kangra, H.P. IndiaWe fabricated a new metal-insulator-metal capacitor at room temperature, comprising a ∼90 nm thin low–k adamantane film on a Si substrate. The surface morphology of deposited organic film was investigated by using scanning electron microscopy and Raman spectroscopy, which is confirmed that the adamantane thin film was uniformly distributed on the Si surface. The adamantane film exhibits a low leakage current density of 7.4 x 10−7 A/cm2 at 13.5 V, better capacitance density of 2.14 fF/μm2 at 100 KHz.http://dx.doi.org/10.1063/1.4954807 |
| spellingShingle | Rajanish N. Tiwari Masamichi Yoshimura Electrical characterization of MIM capacitor comprises an adamantane film at room temperature AIP Advances |
| title | Electrical characterization of MIM capacitor comprises an adamantane film at room temperature |
| title_full | Electrical characterization of MIM capacitor comprises an adamantane film at room temperature |
| title_fullStr | Electrical characterization of MIM capacitor comprises an adamantane film at room temperature |
| title_full_unstemmed | Electrical characterization of MIM capacitor comprises an adamantane film at room temperature |
| title_short | Electrical characterization of MIM capacitor comprises an adamantane film at room temperature |
| title_sort | electrical characterization of mim capacitor comprises an adamantane film at room temperature |
| url | http://dx.doi.org/10.1063/1.4954807 |
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