Highly uniform GaSb quantum dots with indirect–direct bandgap crossover at telecom range
We demonstrate a new quantum-confined semiconductor material based on GaSb quantum dots (QDs) embedded in a single-crystalline AlGaSb matrix by filling droplet-etched nanoholes. The droplet-mediated growth mechanism allows formation of low QD densities required for non-classical single-QD light sour...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-05-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0049788 |