Functionalization of Molybdenum Disulfide via Plasma Treatment and 3-Mercaptopropionic Acid for Gas Sensors

Monolayer and multilayer molybdenum disulfide (MoS<sub>2</sub>) materials are semiconductors with direct/indirect bandgaps of 1.2–1.8 eV and are attractive due to their changes in response to electrical, physicochemical, biological, and mechanical factors. Since the desired electrical pr...

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Bibliographic Details
Main Authors: Won Seok Seo, Dae Ki Kim, Ji-Hoon Han, Kang-Bak Park, Su Chak Ryu, Nam Ki Min, Joon Hyub Kim
Format: Article
Language:English
Published: MDPI AG 2020-09-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/10/9/1860
Description
Summary:Monolayer and multilayer molybdenum disulfide (MoS<sub>2</sub>) materials are semiconductors with direct/indirect bandgaps of 1.2–1.8 eV and are attractive due to their changes in response to electrical, physicochemical, biological, and mechanical factors. Since the desired electrical properties of MoS<sub>2</sub> are known, research on its electrical properties has increased, with focus on the deposition and growth of large-area MoS<sub>2</sub> and its functionalization. While research on the large-scale production of MoS<sub>2</sub> is actively underway, there is a lack of studies on functionalization approaches, which are essential since functional groups can help to dissolve particles or provide adequate reactivity. Strategies for producing films of functionalized MoS<sub>2</sub> are rare, and what methods do exist are either complex or inefficient. This work introduces an efficient way to functionalize MoS<sub>2</sub>. Functional groups are formed on the surface by exposing MoS<sub>2</sub> with surface sulfur vacancies generated by plasma treatment to 3-mercaptopropionic acid. This technique can create 1.8 times as many carboxyl groups on the MoS<sub>2</sub> surface compared with previously reported strategies. The MoS<sub>2</sub>-based gas sensor fabricated using the proposed method shows a 2.6 times higher sensitivity and much lower detection limit than the untreated device.
ISSN:2079-4991