| Summary: | In this paper, a novel silicon super-junction (SJ) MOSFET embedded with a soft reverse recovery body diode is proposed and studied by numerical simulation. The device introduces an n<sup>+</sup>-buffer layer between the n<sup>−</sup>-buffer layer and the n<sup>+</sup>-substrate to improve the reverse recovery behaviour of its body diode. The n<sup>+</sup>-buffer layer provides residual carriers during the reverse recovery process, reduces the overshoot voltage, and suppresses oscillation. Simulated results demonstrate that the increment of the on-resistance and the drain-to-source overshoot voltage can be respectively kept below 5% and 20 V, if a 10 μm n<sup>+</sup>-buffer layer whose impurity concentration ranges from 4 × 10<sup>15</sup> cm<sup>−3</sup> to 6 × 10<sup>16</sup> cm<sup>−3</sup> is used. In addition, the fabrication process is the same as that of the conventional SJ-MOSFET. These features make the proposed SJ-MOSFET suitable for inverter applications.
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