Effect of Various Defects on 4H-SiC Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions
In this paper, the chemical vapor deposition (CVD) processing for 4H-SiC epilayer is investigated with particular emphasis on the defects and the noise properties. It is experimentally found that the process parameters of C/Si ratio strongly affect the surface roughness of epilayers and the density...
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| Format: | Article |
| Language: | English |
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MDPI AG
2020-06-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/11/6/609 |
| _version_ | 1827714372205543424 |
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| author | Jinlan Li Chenxu Meng Le Yu Yun Li Feng Yan Ping Han Xiaoli Ji |
| author_facet | Jinlan Li Chenxu Meng Le Yu Yun Li Feng Yan Ping Han Xiaoli Ji |
| author_sort | Jinlan Li |
| collection | DOAJ |
| description | In this paper, the chemical vapor deposition (CVD) processing for 4H-SiC epilayer is investigated with particular emphasis on the defects and the noise properties. It is experimentally found that the process parameters of C/Si ratio strongly affect the surface roughness of epilayers and the density of triangular defects (TDs), while no direct correlation between the C/Si ratio and the deep level defect Z<sub>1/2</sub> could be confirmed. By adjusting the C/Si ratio, a decrease of several orders of magnitudes in the noise level for the 4H-SiC Schottky barrier diodes (SBDs) could be achieved attributing to the improved epilayer quality with low TD density and low surface roughness. The work should provide a helpful clue for further improving the device performance of both the 4H-SiC SBDs and the Schottky barrier ultraviolet photodetectors fabricated on commercial 4H-SiC wafers. |
| first_indexed | 2024-03-10T18:55:50Z |
| format | Article |
| id | doaj.art-ec2a70c66cbb482eb70b3e5aac9bdd83 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T18:55:50Z |
| publishDate | 2020-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-ec2a70c66cbb482eb70b3e5aac9bdd832023-11-20T04:47:12ZengMDPI AGMicromachines2072-666X2020-06-0111660910.3390/mi11060609Effect of Various Defects on 4H-SiC Schottky Diode Performance and Its Relation to Epitaxial Growth ConditionsJinlan Li0Chenxu Meng1Le Yu2Yun Li3Feng Yan4Ping Han5Xiaoli Ji6College of Information Engineering, Yangzhou University, Yangzhou 225009, ChinaCollege of Electronic Science and Engineering, Nanjing University, Nanjing 210093, ChinaCollege of Electronic Science and Engineering, Nanjing University, Nanjing 210093, ChinaScience and Technology on Monolithic Integrated Circuits and Modules Laboratory, Electronic Devices Institute, Nanjing 210016, ChinaCollege of Electronic Science and Engineering, Nanjing University, Nanjing 210093, ChinaCollege of Electronic Science and Engineering, Nanjing University, Nanjing 210093, ChinaCollege of Electronic Science and Engineering, Nanjing University, Nanjing 210093, ChinaIn this paper, the chemical vapor deposition (CVD) processing for 4H-SiC epilayer is investigated with particular emphasis on the defects and the noise properties. It is experimentally found that the process parameters of C/Si ratio strongly affect the surface roughness of epilayers and the density of triangular defects (TDs), while no direct correlation between the C/Si ratio and the deep level defect Z<sub>1/2</sub> could be confirmed. By adjusting the C/Si ratio, a decrease of several orders of magnitudes in the noise level for the 4H-SiC Schottky barrier diodes (SBDs) could be achieved attributing to the improved epilayer quality with low TD density and low surface roughness. The work should provide a helpful clue for further improving the device performance of both the 4H-SiC SBDs and the Schottky barrier ultraviolet photodetectors fabricated on commercial 4H-SiC wafers.https://www.mdpi.com/2072-666X/11/6/609Ni/4H-SiC Schottky barrier diodes (SBDs)C/Si ratios1/<i>f</i> noise |
| spellingShingle | Jinlan Li Chenxu Meng Le Yu Yun Li Feng Yan Ping Han Xiaoli Ji Effect of Various Defects on 4H-SiC Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions Micromachines Ni/4H-SiC Schottky barrier diodes (SBDs) C/Si ratios 1/<i>f</i> noise |
| title | Effect of Various Defects on 4H-SiC Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions |
| title_full | Effect of Various Defects on 4H-SiC Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions |
| title_fullStr | Effect of Various Defects on 4H-SiC Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions |
| title_full_unstemmed | Effect of Various Defects on 4H-SiC Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions |
| title_short | Effect of Various Defects on 4H-SiC Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions |
| title_sort | effect of various defects on 4h sic schottky diode performance and its relation to epitaxial growth conditions |
| topic | Ni/4H-SiC Schottky barrier diodes (SBDs) C/Si ratios 1/<i>f</i> noise |
| url | https://www.mdpi.com/2072-666X/11/6/609 |
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