The Experimentally Measured Influence of the Si-MOSFET Replacement Switches to WBG Transistors in the Voltage Source Inverters as the Source of Radiation Noise

The Experimentally Measured Influence of the Si-MOSFET Replacement Switches to WBG Transistors in the Voltage Source Inverters as the Source of Radiation Noise

The aim of the paper is to present the change in the radiation noise of the single-phase voltage source inverter (VSI) when the Si-MOSFET transistors are replaced by the wide-band-gap (WBG) SiC-MOSFET and GaN transistors. The power spectral density of the near-field interference is used to visualise...

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Bibliographic Details
Main Authors: Krzysztof Bernacki, Zbigniew Rymarski
Format: Article
Language:English
Published: MDPI AG 2023-01-01
Series:Energies
Subjects:
voltage source inverter
wide-band-gap transistors
near-field interferences
power spectral density
radiation noise
Online Access:https://www.mdpi.com/1996-1073/16/2/870

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