Nanostructuring the SiOx layers by using laser-induced self-organization
The processes of laser-induced transformation of SiOx oxide layers into the nanocomposite ones were studied. The possibility of phase separation in the form of Si nanocrystals surrounded by corresponding SiO2 oxide matrix under irradiation by nanosecond pulses of YAG:Nd+3-laser were shown. Laser rad...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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National Academy of Sciences of Ukraine. Institute of Semi conductor physics.
2017-07-01
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| Series: | Semiconductor Physics, Quantum Electronics & Optoelectronics |
| Subjects: | |
| Online Access: | http://journal-spqeo.org.ua/n2_2017/P179-184abstr.html |
| _version_ | 1818751857372168192 |
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| author | O.V. Steblova L.L. Fedorenko A.A. Evtukh |
| author_facet | O.V. Steblova L.L. Fedorenko A.A. Evtukh |
| author_sort | O.V. Steblova |
| collection | DOAJ |
| description | The processes of laser-induced transformation of SiOx oxide layers into the nanocomposite ones were studied. The possibility of phase separation in the form of Si nanocrystals surrounded by corresponding SiO2 oxide matrix under irradiation by nanosecond pulses of YAG:Nd+3-laser were shown. Laser radiation at the fundamental wavelength, λ1 = 1064 nm, and second harmonic, λ2 = 532 nm, were applied at researches. The size and surface concentration of nanofragments dependences on the intensity and wavelength of the laser irradiation have been determined from experimental data based on atomic force microscopy, infrared transmission spectra and electro-physical measurements. SiOx nanocomposite layers containing Si nanoparticles, the size of which depends on laser beam intensity and wavelength, have been obtained. The processes of nanoparticles formation occur mainly through generation and mass transfer of interstitial atoms in the solid mode (before the melting point threshold) due to the effect of laser thermal shock. |
| first_indexed | 2024-12-18T04:42:14Z |
| format | Article |
| id | doaj.art-ec3c13729acc48f49a0a21498207cf29 |
| institution | Directory Open Access Journal |
| issn | 1560-8034 1605-6582 |
| language | English |
| last_indexed | 2024-12-18T04:42:14Z |
| publishDate | 2017-07-01 |
| publisher | National Academy of Sciences of Ukraine. Institute of Semi conductor physics. |
| record_format | Article |
| series | Semiconductor Physics, Quantum Electronics & Optoelectronics |
| spelling | doaj.art-ec3c13729acc48f49a0a21498207cf292022-12-21T21:20:42ZengNational Academy of Sciences of Ukraine. Institute of Semi conductor physics.Semiconductor Physics, Quantum Electronics & Optoelectronics1560-80341605-65822017-07-0120217918410.15407/spqeo20.02.179Nanostructuring the SiOx layers by using laser-induced self-organizationO.V. Steblova0L.L. Fedorenko1A.A. Evtukh2Taras Shevchenko Kyiv National University, Institute of High Technologies, Kyiv, UkraineV. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, 41, prospect Nauky, 03680 Kyiv, UkraineV. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, 41, prospect Nauky, 03680 Kyiv, UkraineThe processes of laser-induced transformation of SiOx oxide layers into the nanocomposite ones were studied. The possibility of phase separation in the form of Si nanocrystals surrounded by corresponding SiO2 oxide matrix under irradiation by nanosecond pulses of YAG:Nd+3-laser were shown. Laser radiation at the fundamental wavelength, λ1 = 1064 nm, and second harmonic, λ2 = 532 nm, were applied at researches. The size and surface concentration of nanofragments dependences on the intensity and wavelength of the laser irradiation have been determined from experimental data based on atomic force microscopy, infrared transmission spectra and electro-physical measurements. SiOx nanocomposite layers containing Si nanoparticles, the size of which depends on laser beam intensity and wavelength, have been obtained. The processes of nanoparticles formation occur mainly through generation and mass transfer of interstitial atoms in the solid mode (before the melting point threshold) due to the effect of laser thermal shock.http://journal-spqeo.org.ua/n2_2017/P179-184abstr.htmlnanocrystaloxidesnanocompositelaser thermal shock |
| spellingShingle | O.V. Steblova L.L. Fedorenko A.A. Evtukh Nanostructuring the SiOx layers by using laser-induced self-organization Semiconductor Physics, Quantum Electronics & Optoelectronics nanocrystal oxides nanocomposite laser thermal shock |
| title | Nanostructuring the SiOx layers by using laser-induced self-organization |
| title_full | Nanostructuring the SiOx layers by using laser-induced self-organization |
| title_fullStr | Nanostructuring the SiOx layers by using laser-induced self-organization |
| title_full_unstemmed | Nanostructuring the SiOx layers by using laser-induced self-organization |
| title_short | Nanostructuring the SiOx layers by using laser-induced self-organization |
| title_sort | nanostructuring the siox layers by using laser induced self organization |
| topic | nanocrystal oxides nanocomposite laser thermal shock |
| url | http://journal-spqeo.org.ua/n2_2017/P179-184abstr.html |
| work_keys_str_mv | AT ovsteblova nanostructuringthesioxlayersbyusinglaserinducedselforganization AT llfedorenko nanostructuringthesioxlayersbyusinglaserinducedselforganization AT aaevtukh nanostructuringthesioxlayersbyusinglaserinducedselforganization |