Potential of carbon nanotube field effect transistors for analogue circuits

Potential of carbon nanotube field effect transistors for analogue circuits

This Letter presents a detailed comparison of carbon nanotube field effect transistors (CNFETs) and metal oxide semiconductor field effect transistors (MOSFETs) with special focus on carbon nanotube FET's potential for implementing analogue circuits in the mm-wave and sub-terahertz range. The l...

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Bibliographic Details
Main Authors:	Khizar Hayat, Hammad M. Cheema, Atif Shamim
Format:	Article
Language:	English
Published:	Wiley 2013-11-01
Series:	The Journal of Engineering
Subjects:	CMOS analogue integrated circuits invertors MOSFET oscillators photolithography carbon nanotube field effect transistors analogue circuits metal oxide semiconductor field effect transistors MOSFETs CNFET lithographic dimensions complementary metal oxide semiconductor RF parameters CNFET-based inverter three-stage ring oscillator LC oscillator oscillation frequency
Online Access:	http://digital-library.theiet.org/content/journals/10.1049/joe.2013.0067

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