Silicon–germanium receivers for short-wave-infrared optoelectronics and communications
Integrated silicon nanophotonics has rapidly established itself as intriguing research field, whose outlets impact numerous facets of daily life. Indeed, nanophotonics has propelled many advances in optoelectronics, information and communication technologies, sensing and energy, to name a few. Silic...
| Main Authors: | , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
De Gruyter
2020-12-01
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| Series: | Nanophotonics |
| Subjects: | |
| Online Access: | https://doi.org/10.1515/nanoph-2020-0547 |
| _version_ | 1818689798264586240 |
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| author | Benedikovic Daniel Virot Léopold Aubin Guy Hartmann Jean-Michel Amar Farah Le Roux Xavier Alonso-Ramos Carlos Cassan Éric Marris-Morini Delphine Fédéli Jean-Marc Boeuf Frédéric Szelag Bertrand Vivien Laurent |
| author_facet | Benedikovic Daniel Virot Léopold Aubin Guy Hartmann Jean-Michel Amar Farah Le Roux Xavier Alonso-Ramos Carlos Cassan Éric Marris-Morini Delphine Fédéli Jean-Marc Boeuf Frédéric Szelag Bertrand Vivien Laurent |
| author_sort | Benedikovic Daniel |
| collection | DOAJ |
| description | Integrated silicon nanophotonics has rapidly established itself as intriguing research field, whose outlets impact numerous facets of daily life. Indeed, nanophotonics has propelled many advances in optoelectronics, information and communication technologies, sensing and energy, to name a few. Silicon nanophotonics aims to deliver compact and high-performance components based on semiconductor chips leveraging mature fabrication routines already developed within the modern microelectronics. However, the silicon indirect bandgap, the centrosymmetric nature of its lattice and its wide transparency window across optical telecommunication wavebands hamper the realization of essential functionalities, including efficient light generation/amplification, fast electro-optical modulation, and reliable photodetection. Germanium, a well-established complement material in silicon chip industry, has a quasi-direct energy band structure in this wavelength domain. Germanium and its alloys are thus the most suitable candidates for active functions, i.e. bringing them to close to the silicon family of nanophotonic devices. Along with recent advances in silicon–germanium-based lasers and modulators, short-wave-infrared receivers are also key photonic chip elements to tackle cost, speed and energy consumption challenges of exponentially growing data traffics within next-generation systems and networks. Herein, we provide a detailed overview on the latest development in nanophotonic receivers based on silicon and germanium, including material processing, integration and diversity of device designs and arrangements. Our Review also emphasizes surging applications in optoelectronics and communications and concludes with challenges and perspectives potentially encountered in the foreseeable future. |
| first_indexed | 2024-12-17T12:15:50Z |
| format | Article |
| id | doaj.art-ec612a4e44a5415b81cc1180f2ca48b3 |
| institution | Directory Open Access Journal |
| issn | 2192-8606 2192-8614 |
| language | English |
| last_indexed | 2024-12-17T12:15:50Z |
| publishDate | 2020-12-01 |
| publisher | De Gruyter |
| record_format | Article |
| series | Nanophotonics |
| spelling | doaj.art-ec612a4e44a5415b81cc1180f2ca48b32022-12-21T21:49:12ZengDe GruyterNanophotonics2192-86062192-86142020-12-011031059107910.1515/nanoph-2020-0547Silicon–germanium receivers for short-wave-infrared optoelectronics and communicationsBenedikovic Daniel0Virot Léopold1Aubin Guy2Hartmann Jean-Michel3Amar Farah4Le Roux Xavier5Alonso-Ramos Carlos6Cassan Éric7Marris-Morini Delphine8Fédéli Jean-Marc9Boeuf Frédéric10Szelag Bertrand11Vivien Laurent12Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, FranceUniversity Grenoble Alpes and CEA, LETI, 38054Grenoble, FranceUniversité Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, FranceUniversity Grenoble Alpes and CEA, LETI, 38054Grenoble, FranceUniversité Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, FranceUniversité Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, FranceUniversité Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, FranceUniversité Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, FranceUniversité Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, FranceUniversity Grenoble Alpes and CEA, LETI, 38054Grenoble, FranceSTMicroelectronics, Silicon Technology Development, 38923Crolles, FranceUniversity Grenoble Alpes and CEA, LETI, 38054Grenoble, FranceUniversité Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, FranceIntegrated silicon nanophotonics has rapidly established itself as intriguing research field, whose outlets impact numerous facets of daily life. Indeed, nanophotonics has propelled many advances in optoelectronics, information and communication technologies, sensing and energy, to name a few. Silicon nanophotonics aims to deliver compact and high-performance components based on semiconductor chips leveraging mature fabrication routines already developed within the modern microelectronics. However, the silicon indirect bandgap, the centrosymmetric nature of its lattice and its wide transparency window across optical telecommunication wavebands hamper the realization of essential functionalities, including efficient light generation/amplification, fast electro-optical modulation, and reliable photodetection. Germanium, a well-established complement material in silicon chip industry, has a quasi-direct energy band structure in this wavelength domain. Germanium and its alloys are thus the most suitable candidates for active functions, i.e. bringing them to close to the silicon family of nanophotonic devices. Along with recent advances in silicon–germanium-based lasers and modulators, short-wave-infrared receivers are also key photonic chip elements to tackle cost, speed and energy consumption challenges of exponentially growing data traffics within next-generation systems and networks. Herein, we provide a detailed overview on the latest development in nanophotonic receivers based on silicon and germanium, including material processing, integration and diversity of device designs and arrangements. Our Review also emphasizes surging applications in optoelectronics and communications and concludes with challenges and perspectives potentially encountered in the foreseeable future.https://doi.org/10.1515/nanoph-2020-0547group-iv nanophotonicssintegrated optoelectronics and communicationsoptical photodetector |
| spellingShingle | Benedikovic Daniel Virot Léopold Aubin Guy Hartmann Jean-Michel Amar Farah Le Roux Xavier Alonso-Ramos Carlos Cassan Éric Marris-Morini Delphine Fédéli Jean-Marc Boeuf Frédéric Szelag Bertrand Vivien Laurent Silicon–germanium receivers for short-wave-infrared optoelectronics and communications Nanophotonics group-iv nanophotonicss integrated optoelectronics and communications optical photodetector |
| title | Silicon–germanium receivers for short-wave-infrared optoelectronics and communications |
| title_full | Silicon–germanium receivers for short-wave-infrared optoelectronics and communications |
| title_fullStr | Silicon–germanium receivers for short-wave-infrared optoelectronics and communications |
| title_full_unstemmed | Silicon–germanium receivers for short-wave-infrared optoelectronics and communications |
| title_short | Silicon–germanium receivers for short-wave-infrared optoelectronics and communications |
| title_sort | silicon germanium receivers for short wave infrared optoelectronics and communications |
| topic | group-iv nanophotonicss integrated optoelectronics and communications optical photodetector |
| url | https://doi.org/10.1515/nanoph-2020-0547 |
| work_keys_str_mv | AT benedikovicdaniel silicongermaniumreceiversforshortwaveinfraredoptoelectronicsandcommunications AT virotleopold silicongermaniumreceiversforshortwaveinfraredoptoelectronicsandcommunications AT aubinguy silicongermaniumreceiversforshortwaveinfraredoptoelectronicsandcommunications AT hartmannjeanmichel silicongermaniumreceiversforshortwaveinfraredoptoelectronicsandcommunications AT amarfarah silicongermaniumreceiversforshortwaveinfraredoptoelectronicsandcommunications AT lerouxxavier silicongermaniumreceiversforshortwaveinfraredoptoelectronicsandcommunications AT alonsoramoscarlos silicongermaniumreceiversforshortwaveinfraredoptoelectronicsandcommunications AT cassaneric silicongermaniumreceiversforshortwaveinfraredoptoelectronicsandcommunications AT marrismorinidelphine silicongermaniumreceiversforshortwaveinfraredoptoelectronicsandcommunications AT fedelijeanmarc silicongermaniumreceiversforshortwaveinfraredoptoelectronicsandcommunications AT boeuffrederic silicongermaniumreceiversforshortwaveinfraredoptoelectronicsandcommunications AT szelagbertrand silicongermaniumreceiversforshortwaveinfraredoptoelectronicsandcommunications AT vivienlaurent silicongermaniumreceiversforshortwaveinfraredoptoelectronicsandcommunications |