Probing orbital ordering in LaVO3 epitaxial films by Raman scattering

Single crystals of Mott-Hubbard insulator LaVO3 exhibit spin and orbital ordering along with a structural change below ≈140 K. The occurrence of orbital ordering in epitaxial LaVO3 films has, however, been little investigated. By temperature-dependent Raman scattering spectroscopy, we probed and evi...

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Bibliographic Details
Main Authors: I. Vrejoiu, C. Himcinschi, L. Jin, C.-L. Jia, N. Raab, J. Engelmayer, R. Waser, R. Dittmann, P. H. M. van Loosdrecht
Format: Article
Language:English
Published: AIP Publishing LLC 2016-04-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.4945658
Description
Summary:Single crystals of Mott-Hubbard insulator LaVO3 exhibit spin and orbital ordering along with a structural change below ≈140 K. The occurrence of orbital ordering in epitaxial LaVO3 films has, however, been little investigated. By temperature-dependent Raman scattering spectroscopy, we probed and evidenced the transition to orbital ordering in epitaxial LaVO3 film samples fabricated by pulsed-laser deposition. This opens up the possibility to explore the influence of different epitaxial strain (compressive vs. tensile) and of epitaxy-induced distortions of oxygen octahedra on the orbital ordering, in epitaxial perovskite vanadate films.
ISSN:2166-532X