Probing orbital ordering in LaVO3 epitaxial films by Raman scattering
Single crystals of Mott-Hubbard insulator LaVO3 exhibit spin and orbital ordering along with a structural change below ≈140 K. The occurrence of orbital ordering in epitaxial LaVO3 films has, however, been little investigated. By temperature-dependent Raman scattering spectroscopy, we probed and evi...
Main Authors: | , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2016-04-01
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Series: | APL Materials |
Online Access: | http://dx.doi.org/10.1063/1.4945658 |
Summary: | Single crystals of Mott-Hubbard insulator LaVO3 exhibit spin and orbital ordering along with a structural change below ≈140 K. The occurrence of orbital ordering in epitaxial LaVO3 films has, however, been little investigated. By temperature-dependent Raman scattering spectroscopy, we probed and evidenced the transition to orbital ordering in epitaxial LaVO3 film samples fabricated by pulsed-laser deposition. This opens up the possibility to explore the influence of different epitaxial strain (compressive vs. tensile) and of epitaxy-induced distortions of oxygen octahedra on the orbital ordering, in epitaxial perovskite vanadate films. |
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ISSN: | 2166-532X |