Epitaxial Lateral Overgrowth of {11-22} InGaN Layers Using Patterned InGaN Template and Improvement of Optical Properties from Multiple Quantum Wells
We report the growth and characterization of thick, completely relaxed {11-22}-oriented InGaN layers using epitaxial lateral overgrowth (ELO). Although it was difficult to grow ELO-InGaN layers on patterned GaN templates, we succeeded in growing ELO-InGaN layers on a patterned InGaN template. The fu...
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-09-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/12/10/1373 |
| _version_ | 1797474128708501504 |
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| author | Narihito Okada Kazuyuki Tadatomo |
| author_facet | Narihito Okada Kazuyuki Tadatomo |
| author_sort | Narihito Okada |
| collection | DOAJ |
| description | We report the growth and characterization of thick, completely relaxed {11-22}-oriented InGaN layers using epitaxial lateral overgrowth (ELO). Although it was difficult to grow ELO-InGaN layers on patterned GaN templates, we succeeded in growing ELO-InGaN layers on a patterned InGaN template. The full width at half maximum of the X-ray rocking curve of ELO-InGaN on the InGaN templates was less than that of non-ELO InGaN. The photoluminescence intensity of InGaN/GaN multiple quantum wells on ELO-InGaN was approximately five times stronger than that on the {11-22} GaN template. |
| first_indexed | 2024-03-09T20:25:44Z |
| format | Article |
| id | doaj.art-ec72675fe3bd41138d9dd572ce318464 |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-09T20:25:44Z |
| publishDate | 2022-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-ec72675fe3bd41138d9dd572ce3184642023-11-23T23:37:24ZengMDPI AGCrystals2073-43522022-09-011210137310.3390/cryst12101373Epitaxial Lateral Overgrowth of {11-22} InGaN Layers Using Patterned InGaN Template and Improvement of Optical Properties from Multiple Quantum WellsNarihito Okada0Kazuyuki Tadatomo1Yamaguchi University, 2-16-1 Tokiwadai Ube, Yamaguchi 755-8611, JapanYamaguchi University, 2-16-1 Tokiwadai Ube, Yamaguchi 755-8611, JapanWe report the growth and characterization of thick, completely relaxed {11-22}-oriented InGaN layers using epitaxial lateral overgrowth (ELO). Although it was difficult to grow ELO-InGaN layers on patterned GaN templates, we succeeded in growing ELO-InGaN layers on a patterned InGaN template. The full width at half maximum of the X-ray rocking curve of ELO-InGaN on the InGaN templates was less than that of non-ELO InGaN. The photoluminescence intensity of InGaN/GaN multiple quantum wells on ELO-InGaN was approximately five times stronger than that on the {11-22} GaN template.https://www.mdpi.com/2073-4352/12/10/1373InGaNepitaxial lateral overgrowthmultiple quantum wells |
| spellingShingle | Narihito Okada Kazuyuki Tadatomo Epitaxial Lateral Overgrowth of {11-22} InGaN Layers Using Patterned InGaN Template and Improvement of Optical Properties from Multiple Quantum Wells Crystals InGaN epitaxial lateral overgrowth multiple quantum wells |
| title | Epitaxial Lateral Overgrowth of {11-22} InGaN Layers Using Patterned InGaN Template and Improvement of Optical Properties from Multiple Quantum Wells |
| title_full | Epitaxial Lateral Overgrowth of {11-22} InGaN Layers Using Patterned InGaN Template and Improvement of Optical Properties from Multiple Quantum Wells |
| title_fullStr | Epitaxial Lateral Overgrowth of {11-22} InGaN Layers Using Patterned InGaN Template and Improvement of Optical Properties from Multiple Quantum Wells |
| title_full_unstemmed | Epitaxial Lateral Overgrowth of {11-22} InGaN Layers Using Patterned InGaN Template and Improvement of Optical Properties from Multiple Quantum Wells |
| title_short | Epitaxial Lateral Overgrowth of {11-22} InGaN Layers Using Patterned InGaN Template and Improvement of Optical Properties from Multiple Quantum Wells |
| title_sort | epitaxial lateral overgrowth of 11 22 ingan layers using patterned ingan template and improvement of optical properties from multiple quantum wells |
| topic | InGaN epitaxial lateral overgrowth multiple quantum wells |
| url | https://www.mdpi.com/2073-4352/12/10/1373 |
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