Preparation and Charge Transfer at Sb<sub>2</sub>Se<sub>3</sub>/1L-MoS<sub>2</sub> Heterojunction
Owing to the strong optical absorption of Sb2Se3, building heterojunctions (HJs) by using thin-layer Sb2Se3 and other two-dimensional (2D) materials is critical to the design and applications of ultrathin optoelectronic devices. However, the preparation of HJs using Sb2Se3 and other transition metal...
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| Format: | Article |
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MDPI AG
2022-08-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/11/16/2574 |
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| author | Yiren Wang Weitao Su Fei Chen Hong-Wei Lu |
| author_facet | Yiren Wang Weitao Su Fei Chen Hong-Wei Lu |
| author_sort | Yiren Wang |
| collection | DOAJ |
| description | Owing to the strong optical absorption of Sb2Se3, building heterojunctions (HJs) by using thin-layer Sb2Se3 and other two-dimensional (2D) materials is critical to the design and applications of ultrathin optoelectronic devices. However, the preparation of HJs using Sb2Se3 and other transition metal dichalcogenide (TMDC) thin layers is still challenging. Herein, a chemical vapor deposition (CVD) method was used to prepare monolayer MoS2(1L-MoS2) and Sb2Se3 thin layers. A dry transfer method was subsequently used to build their HJs. Individual PL spectra and PL mapping results obtained at the HJs indicate a charge injection from 1L-MoS2 into Sb2Se3 flake, which was further confirmed by contact potential difference (CPD) results obtained by using Kelvin probe force microscopy (KPFM). Further measurements indicate a type-Ⅰ band alignment with a band offset finally determined to be 157 meV. The obtained results of Sb2Se3/1L-MoS2 HJs will benefit the rational design of novel ultrathin optoelectronic devices based on novel 2D absorber layers working in visible light. |
| first_indexed | 2024-03-09T04:32:27Z |
| format | Article |
| id | doaj.art-ec75cb20dbf34519b3e127363aa37748 |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-09T04:32:27Z |
| publishDate | 2022-08-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-ec75cb20dbf34519b3e127363aa377482023-12-03T13:34:31ZengMDPI AGElectronics2079-92922022-08-011116257410.3390/electronics11162574Preparation and Charge Transfer at Sb<sub>2</sub>Se<sub>3</sub>/1L-MoS<sub>2</sub> HeterojunctionYiren Wang0Weitao Su1Fei Chen2Hong-Wei Lu3College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, ChinaSchool of Sciences, Hangzhou Dianzi University, Hangzhou 310018, ChinaCollege of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, ChinaSchool of Sciences, Hangzhou Dianzi University, Hangzhou 310018, ChinaOwing to the strong optical absorption of Sb2Se3, building heterojunctions (HJs) by using thin-layer Sb2Se3 and other two-dimensional (2D) materials is critical to the design and applications of ultrathin optoelectronic devices. However, the preparation of HJs using Sb2Se3 and other transition metal dichalcogenide (TMDC) thin layers is still challenging. Herein, a chemical vapor deposition (CVD) method was used to prepare monolayer MoS2(1L-MoS2) and Sb2Se3 thin layers. A dry transfer method was subsequently used to build their HJs. Individual PL spectra and PL mapping results obtained at the HJs indicate a charge injection from 1L-MoS2 into Sb2Se3 flake, which was further confirmed by contact potential difference (CPD) results obtained by using Kelvin probe force microscopy (KPFM). Further measurements indicate a type-Ⅰ band alignment with a band offset finally determined to be 157 meV. The obtained results of Sb2Se3/1L-MoS2 HJs will benefit the rational design of novel ultrathin optoelectronic devices based on novel 2D absorber layers working in visible light.https://www.mdpi.com/2079-9292/11/16/25741L-MoS<sub>2</sub>Sb<sub>2</sub>Se<sub>3</sub>heterojunctioncharge transfer |
| spellingShingle | Yiren Wang Weitao Su Fei Chen Hong-Wei Lu Preparation and Charge Transfer at Sb<sub>2</sub>Se<sub>3</sub>/1L-MoS<sub>2</sub> Heterojunction Electronics 1L-MoS<sub>2</sub> Sb<sub>2</sub>Se<sub>3</sub> heterojunction charge transfer |
| title | Preparation and Charge Transfer at Sb<sub>2</sub>Se<sub>3</sub>/1L-MoS<sub>2</sub> Heterojunction |
| title_full | Preparation and Charge Transfer at Sb<sub>2</sub>Se<sub>3</sub>/1L-MoS<sub>2</sub> Heterojunction |
| title_fullStr | Preparation and Charge Transfer at Sb<sub>2</sub>Se<sub>3</sub>/1L-MoS<sub>2</sub> Heterojunction |
| title_full_unstemmed | Preparation and Charge Transfer at Sb<sub>2</sub>Se<sub>3</sub>/1L-MoS<sub>2</sub> Heterojunction |
| title_short | Preparation and Charge Transfer at Sb<sub>2</sub>Se<sub>3</sub>/1L-MoS<sub>2</sub> Heterojunction |
| title_sort | preparation and charge transfer at sb sub 2 sub se sub 3 sub 1l mos sub 2 sub heterojunction |
| topic | 1L-MoS<sub>2</sub> Sb<sub>2</sub>Se<sub>3</sub> heterojunction charge transfer |
| url | https://www.mdpi.com/2079-9292/11/16/2574 |
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