Effect of plasma process on n-GaN surface probed with electrochemical short loop
Plasma etching treatments are important steps in GaN-based devices fabrication, but can create defects on GaN surfaces. These surface defects can strongly alter device performances. The main objective of this work is to characterize the impact of different plasma etching recipes using an innovative...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2023-10-01
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| Series: | Power Electronic Devices and Components |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2772370423000093 |
| _version_ | 1797405341335420928 |
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| author | Carole Pernel William Berthou Sidharth Suman Simon Ruel Laura Vauche |
| author_facet | Carole Pernel William Berthou Sidharth Suman Simon Ruel Laura Vauche |
| author_sort | Carole Pernel |
| collection | DOAJ |
| description | Plasma etching treatments are important steps in GaN-based devices fabrication, but can create defects on GaN surfaces. These surface defects can strongly alter device performances. The main objective of this work is to characterize the impact of different plasma etching recipes using an innovative electrochemical short loop based on Mott-Schottky (MS) method. The effect of defects has been studied in terms of Fermi Level pinning. Barrier height has been identified as a relevant criteria to describe surface damage induced by plasma treatment. Probing Conventional LETI plasma etching process with the Mott-Schottky method demonstrates a good reproducibility of the electrochemical data and confirms the reliability of the developed method. Various electrochemical tests conducted on 3 plasmas recipes demonstrated that: 1) the RIE etching is damaging, 2) the optimized RIE (Steady A) is less damaging than the other RIE (Steady B) and 3) the RIE associated with ALE process shows the least damaging plasma recipe, as expected. |
| first_indexed | 2024-03-09T03:08:31Z |
| format | Article |
| id | doaj.art-ec764044ac954ae99e744c16d123cd25 |
| institution | Directory Open Access Journal |
| issn | 2772-3704 |
| language | English |
| last_indexed | 2024-03-09T03:08:31Z |
| publishDate | 2023-10-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Power Electronic Devices and Components |
| spelling | doaj.art-ec764044ac954ae99e744c16d123cd252023-12-04T05:24:59ZengElsevierPower Electronic Devices and Components2772-37042023-10-016100041Effect of plasma process on n-GaN surface probed with electrochemical short loopCarole Pernel0William Berthou1Sidharth Suman2Simon Ruel3Laura Vauche4Corresponding author.; University of Grenoble-Alpes, CEA LETI, Minatec Campus, 17 rue des martyrs, F-38054 Grenoble, FranceUniversity of Grenoble-Alpes, CEA LETI, Minatec Campus, 17 rue des martyrs, F-38054 Grenoble, FranceUniversity of Grenoble-Alpes, CEA LETI, Minatec Campus, 17 rue des martyrs, F-38054 Grenoble, FranceUniversity of Grenoble-Alpes, CEA LETI, Minatec Campus, 17 rue des martyrs, F-38054 Grenoble, FranceUniversity of Grenoble-Alpes, CEA LETI, Minatec Campus, 17 rue des martyrs, F-38054 Grenoble, FrancePlasma etching treatments are important steps in GaN-based devices fabrication, but can create defects on GaN surfaces. These surface defects can strongly alter device performances. The main objective of this work is to characterize the impact of different plasma etching recipes using an innovative electrochemical short loop based on Mott-Schottky (MS) method. The effect of defects has been studied in terms of Fermi Level pinning. Barrier height has been identified as a relevant criteria to describe surface damage induced by plasma treatment. Probing Conventional LETI plasma etching process with the Mott-Schottky method demonstrates a good reproducibility of the electrochemical data and confirms the reliability of the developed method. Various electrochemical tests conducted on 3 plasmas recipes demonstrated that: 1) the RIE etching is damaging, 2) the optimized RIE (Steady A) is less damaging than the other RIE (Steady B) and 3) the RIE associated with ALE process shows the least damaging plasma recipe, as expected.http://www.sciencedirect.com/science/article/pii/S2772370423000093GaNElectrochemistryMott-SchottkySurface states |
| spellingShingle | Carole Pernel William Berthou Sidharth Suman Simon Ruel Laura Vauche Effect of plasma process on n-GaN surface probed with electrochemical short loop Power Electronic Devices and Components GaN Electrochemistry Mott-Schottky Surface states |
| title | Effect of plasma process on n-GaN surface probed with electrochemical short loop |
| title_full | Effect of plasma process on n-GaN surface probed with electrochemical short loop |
| title_fullStr | Effect of plasma process on n-GaN surface probed with electrochemical short loop |
| title_full_unstemmed | Effect of plasma process on n-GaN surface probed with electrochemical short loop |
| title_short | Effect of plasma process on n-GaN surface probed with electrochemical short loop |
| title_sort | effect of plasma process on n gan surface probed with electrochemical short loop |
| topic | GaN Electrochemistry Mott-Schottky Surface states |
| url | http://www.sciencedirect.com/science/article/pii/S2772370423000093 |
| work_keys_str_mv | AT carolepernel effectofplasmaprocessonngansurfaceprobedwithelectrochemicalshortloop AT williamberthou effectofplasmaprocessonngansurfaceprobedwithelectrochemicalshortloop AT sidharthsuman effectofplasmaprocessonngansurfaceprobedwithelectrochemicalshortloop AT simonruel effectofplasmaprocessonngansurfaceprobedwithelectrochemicalshortloop AT lauravauche effectofplasmaprocessonngansurfaceprobedwithelectrochemicalshortloop |