Photoelectric Dual Control Negative Differential Resistance Device Fabricated by Standard CMOS Process
To prepare a desired negative differential resistance (NDR) device by standard complementary-metal-oxide-semiconductor (CMOS) process, a photoelectric dual control NDR device with a PNP bipolar-junction-transistor (BJT) and an NPN BJT was designed and fabricated by using the Si-base standard 0.18 &a...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2019-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8692440/ |
| _version_ | 1828968027220082688 |
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| author | Jia Cong Luhong Mao Sheng Xie Fan Zhao Dong Yan Weilian Guo |
| author_facet | Jia Cong Luhong Mao Sheng Xie Fan Zhao Dong Yan Weilian Guo |
| author_sort | Jia Cong |
| collection | DOAJ |
| description | To prepare a desired negative differential resistance (NDR) device by standard complementary-metal-oxide-semiconductor (CMOS) process, a photoelectric dual control NDR device with a PNP bipolar-junction-transistor (BJT) and an NPN BJT was designed and fabricated by using the Si-base standard 0.18 μm CMOS process without any process modification and a special substrate. In order to reduce the valley current under optical control, a metal mask was added to the NDR device. The results show that the device exhibits good NDR characteristics under either voltage-control or photo-control. Under voltage-control, a low volley current (0.23 pA) and a high peak-to-valley current ratio (1.4 × 10<sup>10</sup>) are obtained at less than 1 V. Under photo-control, the two parameters obtained at less than 0.5 V, are 37 nA and 4827, respectively. Also, the device displays fine S-type NDR characteristics and nice maintaining response function under photo-control. These superior photoelectric NDR characteristics endow the device with greatly potential application in the photoelectric logic circuits. |
| first_indexed | 2024-12-14T12:03:42Z |
| format | Article |
| id | doaj.art-ec7e3cfdb9b9411da44f5beaeff2adcd |
| institution | Directory Open Access Journal |
| issn | 1943-0655 |
| language | English |
| last_indexed | 2024-12-14T12:03:42Z |
| publishDate | 2019-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj.art-ec7e3cfdb9b9411da44f5beaeff2adcd2022-12-21T23:01:56ZengIEEEIEEE Photonics Journal1943-06552019-01-0111311010.1109/JPHOT.2019.29101308692440Photoelectric Dual Control Negative Differential Resistance Device Fabricated by Standard CMOS ProcessJia Cong0https://orcid.org/0000-0003-3526-499XLuhong Mao1Sheng Xie2https://orcid.org/0000-0003-0754-4134Fan Zhao3Dong Yan4https://orcid.org/0000-0002-2231-7725Weilian Guo5School of Electrical and Information Engineering, Tianjin University, Tianjin, ChinaSchool of Electrical and Information Engineering, Tianjin University, Tianjin, ChinaSchool of Microelectronics, Tianjin University, Tianjin, ChinaSchool of Electrical and Information Engineering, Tianjin University, Tianjin, ChinaSchool of Electrical and Information Engineering, Tianjin University, Tianjin, ChinaSchool of Microelectronics, Tianjin University, Tianjin, ChinaTo prepare a desired negative differential resistance (NDR) device by standard complementary-metal-oxide-semiconductor (CMOS) process, a photoelectric dual control NDR device with a PNP bipolar-junction-transistor (BJT) and an NPN BJT was designed and fabricated by using the Si-base standard 0.18 μm CMOS process without any process modification and a special substrate. In order to reduce the valley current under optical control, a metal mask was added to the NDR device. The results show that the device exhibits good NDR characteristics under either voltage-control or photo-control. Under voltage-control, a low volley current (0.23 pA) and a high peak-to-valley current ratio (1.4 × 10<sup>10</sup>) are obtained at less than 1 V. Under photo-control, the two parameters obtained at less than 0.5 V, are 37 nA and 4827, respectively. Also, the device displays fine S-type NDR characteristics and nice maintaining response function under photo-control. These superior photoelectric NDR characteristics endow the device with greatly potential application in the photoelectric logic circuits.https://ieeexplore.ieee.org/document/8692440/CMOSnegative differential resistance (NDR)peak-to-valley current ratio (PVCR)photoelectric devicesand optical switch. |
| spellingShingle | Jia Cong Luhong Mao Sheng Xie Fan Zhao Dong Yan Weilian Guo Photoelectric Dual Control Negative Differential Resistance Device Fabricated by Standard CMOS Process IEEE Photonics Journal CMOS negative differential resistance (NDR) peak-to-valley current ratio (PVCR) photoelectric devices and optical switch. |
| title | Photoelectric Dual Control Negative Differential Resistance Device Fabricated by Standard CMOS Process |
| title_full | Photoelectric Dual Control Negative Differential Resistance Device Fabricated by Standard CMOS Process |
| title_fullStr | Photoelectric Dual Control Negative Differential Resistance Device Fabricated by Standard CMOS Process |
| title_full_unstemmed | Photoelectric Dual Control Negative Differential Resistance Device Fabricated by Standard CMOS Process |
| title_short | Photoelectric Dual Control Negative Differential Resistance Device Fabricated by Standard CMOS Process |
| title_sort | photoelectric dual control negative differential resistance device fabricated by standard cmos process |
| topic | CMOS negative differential resistance (NDR) peak-to-valley current ratio (PVCR) photoelectric devices and optical switch. |
| url | https://ieeexplore.ieee.org/document/8692440/ |
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