Sensitivity Study of Polysilicon Nanowire Based on Scattering and Quantum Mechanics Models
In this paper, we report nanowire drain saturation current sensitivity property to measure femtomol level change in drain current due to different proteins i.e. DNA with numerical simulation and fabricated polysilicon nanowire based on the theoretical predictions. In addition, the drain current will...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2018-01-01
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| Series: | MATEC Web of Conferences |
| Online Access: | https://doi.org/10.1051/matecconf/201820101002 |
| _version_ | 1818642993894129664 |
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| author | Aanand Sheu Gene Imam Syed Sarwar Lu Shao Wei Yang Shao-Ming Fan Ming Jen |
| author_facet | Aanand Sheu Gene Imam Syed Sarwar Lu Shao Wei Yang Shao-Ming Fan Ming Jen |
| author_sort | Aanand |
| collection | DOAJ |
| description | In this paper, we report nanowire drain saturation current sensitivity property to measure femtomol level change in drain current due to different proteins i.e. DNA with numerical simulation and fabricated polysilicon nanowire based on the theoretical predictions. In addition, the drain current will also be affected by the back-gate voltage and will increase as the back-gate voltage increases. A 3-dimensional Synopsis tool is used to investigate the drain current behavior for a polysilicon nanowire. The scattering compact model reported result of detailed numerical calculation shows in good agreement, indicating the usefulness of scattering compact model. Whereas 3D synopsis unable to explain the whole region of the drain current characteristics in linear region which uses quantum mechanics model approach. |
| first_indexed | 2024-12-16T23:51:53Z |
| format | Article |
| id | doaj.art-eca4afc7d1ca46a5a330dd64a881ee1a |
| institution | Directory Open Access Journal |
| issn | 2261-236X |
| language | English |
| last_indexed | 2024-12-16T23:51:53Z |
| publishDate | 2018-01-01 |
| publisher | EDP Sciences |
| record_format | Article |
| series | MATEC Web of Conferences |
| spelling | doaj.art-eca4afc7d1ca46a5a330dd64a881ee1a2022-12-21T22:11:19ZengEDP SciencesMATEC Web of Conferences2261-236X2018-01-012010100210.1051/matecconf/201820101002matecconf_ici2017_01002Sensitivity Study of Polysilicon Nanowire Based on Scattering and Quantum Mechanics ModelsAanandSheu GeneImam Syed SarwarLu Shao WeiYang Shao-MingFan Ming JenIn this paper, we report nanowire drain saturation current sensitivity property to measure femtomol level change in drain current due to different proteins i.e. DNA with numerical simulation and fabricated polysilicon nanowire based on the theoretical predictions. In addition, the drain current will also be affected by the back-gate voltage and will increase as the back-gate voltage increases. A 3-dimensional Synopsis tool is used to investigate the drain current behavior for a polysilicon nanowire. The scattering compact model reported result of detailed numerical calculation shows in good agreement, indicating the usefulness of scattering compact model. Whereas 3D synopsis unable to explain the whole region of the drain current characteristics in linear region which uses quantum mechanics model approach.https://doi.org/10.1051/matecconf/201820101002 |
| spellingShingle | Aanand Sheu Gene Imam Syed Sarwar Lu Shao Wei Yang Shao-Ming Fan Ming Jen Sensitivity Study of Polysilicon Nanowire Based on Scattering and Quantum Mechanics Models MATEC Web of Conferences |
| title | Sensitivity Study of Polysilicon Nanowire Based on Scattering and Quantum Mechanics Models |
| title_full | Sensitivity Study of Polysilicon Nanowire Based on Scattering and Quantum Mechanics Models |
| title_fullStr | Sensitivity Study of Polysilicon Nanowire Based on Scattering and Quantum Mechanics Models |
| title_full_unstemmed | Sensitivity Study of Polysilicon Nanowire Based on Scattering and Quantum Mechanics Models |
| title_short | Sensitivity Study of Polysilicon Nanowire Based on Scattering and Quantum Mechanics Models |
| title_sort | sensitivity study of polysilicon nanowire based on scattering and quantum mechanics models |
| url | https://doi.org/10.1051/matecconf/201820101002 |
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