Correlation of Crystal Defects with Device Performance of AlGaN/GaN High-Electron-Mobility Transistors Fabricated on Silicon and Sapphire Substrates

Correlation of Crystal Defects with Device Performance of AlGaN/GaN High-Electron-Mobility Transistors Fabricated on Silicon and Sapphire Substrates

Herein, the performance of AlGaN/GaN high-electron-mobility transistor (HEMT) devices fabricated on Si and sapphire substrates is investigated. The drain current of the AlGaN/GaN HEMT fabricated on sapphire and Si substrates improved from 155 and 150 mA/mm to 290 and 232 mA/mm, respectively, at <...

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Bibliographic Details
Main Authors: Sakhone Pharkphoumy, Vallivedu Janardhanam, Tae-Hoon Jang, Kyu-Hwan Shim, Chel-Jong Choi
Format: Article
Language:English
Published: MDPI AG 2023-02-01
Series:Electronics
Subjects:
AlGaN/GaN HEMT
defects
silicon
sapphire
breakdown voltage
passivation
Online Access:https://www.mdpi.com/2079-9292/12/4/1049

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