A Theoretical Investigation on the Physical Properties of Zirconium Trichalcogenides, ZrS<sub>3</sub>, ZrSe<sub>3</sub> and ZrTe<sub>3</sub> Monolayers

In a recent advance, zirconium triselenide (ZrSe<sub>3</sub>) nanosheets with anisotropic and strain-tunable excitonic response were experimentally fabricated. Motivated by the aforementioned progress, we conduct first-principle calculations to explore the structural, dynamic, Raman resp...

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Main Authors: Bohayra Mortazavi, Fazel Shojaei, Mehmet Yagmurcukardes, Meysam Makaremi, Xiaoying Zhuang
Format: Article
Language:English
Published: MDPI AG 2022-07-01
Series:Energies
Subjects:
Online Access:https://www.mdpi.com/1996-1073/15/15/5479
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author Bohayra Mortazavi
Fazel Shojaei
Mehmet Yagmurcukardes
Meysam Makaremi
Xiaoying Zhuang
author_facet Bohayra Mortazavi
Fazel Shojaei
Mehmet Yagmurcukardes
Meysam Makaremi
Xiaoying Zhuang
author_sort Bohayra Mortazavi
collection DOAJ
description In a recent advance, zirconium triselenide (ZrSe<sub>3</sub>) nanosheets with anisotropic and strain-tunable excitonic response were experimentally fabricated. Motivated by the aforementioned progress, we conduct first-principle calculations to explore the structural, dynamic, Raman response, electronic, single-layer exfoliation energies, and mechanical features of the ZrX<sub>3</sub> (X = S, Se, Te) monolayers. Acquired phonon dispersion relations reveal the dynamical stability of the ZrX<sub>3</sub> (X = S, Se, Te) monolayers. In order to isolate single-layer crystals from bulk counterparts, exfoliation energies of 0.32, 0.37, and 0.4 J/m<sup>2</sup> are predicted for the isolation of ZrS<sub>3</sub>, ZrSe<sub>3</sub>, and ZrTe<sub>3</sub> monolayers, which are comparable to those of graphene. ZrS<sub>3</sub> and ZrSe<sub>3</sub> monolayers are found to be indirect gap semiconductors, with HSE06 band gaps of 1.93 and 1.01 eV, whereas the ZrTe<sub>3</sub> monolayer yields a metallic character. It is shown that the ZrX<sub>3</sub> nanosheets are relatively strong, but with highly anisotropic mechanical responses. This work provides a useful vision concerning the critical physical properties of ZrX<sub>3</sub> (X = S, Se, Te) nanosheets.
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spelling doaj.art-ed5c6c7c0c5b4459866e0e3c0a4f23602023-12-03T12:35:21ZengMDPI AGEnergies1996-10732022-07-011515547910.3390/en15155479A Theoretical Investigation on the Physical Properties of Zirconium Trichalcogenides, ZrS<sub>3</sub>, ZrSe<sub>3</sub> and ZrTe<sub>3</sub> MonolayersBohayra Mortazavi0Fazel Shojaei1Mehmet Yagmurcukardes2Meysam Makaremi3Xiaoying Zhuang4Chair of Computational Science and Simulation Technology, Department of Mathematics and Physics, Leibniz Universität Hannover, Appelstraße 11, 30167 Hannover, GermanyDepartment of Chemistry, Faculty of Nano and Bioscience and Technology, Persian Gulf University, Bushehr 75169, IranDepartment of Photonics, Izmir Institute of Technology, 35430 Izmir, TurkeyIndependent Researcher, Whitehall, MI 49461, USAChair of Computational Science and Simulation Technology, Department of Mathematics and Physics, Leibniz Universität Hannover, Appelstraße 11, 30167 Hannover, GermanyIn a recent advance, zirconium triselenide (ZrSe<sub>3</sub>) nanosheets with anisotropic and strain-tunable excitonic response were experimentally fabricated. Motivated by the aforementioned progress, we conduct first-principle calculations to explore the structural, dynamic, Raman response, electronic, single-layer exfoliation energies, and mechanical features of the ZrX<sub>3</sub> (X = S, Se, Te) monolayers. Acquired phonon dispersion relations reveal the dynamical stability of the ZrX<sub>3</sub> (X = S, Se, Te) monolayers. In order to isolate single-layer crystals from bulk counterparts, exfoliation energies of 0.32, 0.37, and 0.4 J/m<sup>2</sup> are predicted for the isolation of ZrS<sub>3</sub>, ZrSe<sub>3</sub>, and ZrTe<sub>3</sub> monolayers, which are comparable to those of graphene. ZrS<sub>3</sub> and ZrSe<sub>3</sub> monolayers are found to be indirect gap semiconductors, with HSE06 band gaps of 1.93 and 1.01 eV, whereas the ZrTe<sub>3</sub> monolayer yields a metallic character. It is shown that the ZrX<sub>3</sub> nanosheets are relatively strong, but with highly anisotropic mechanical responses. This work provides a useful vision concerning the critical physical properties of ZrX<sub>3</sub> (X = S, Se, Te) nanosheets.https://www.mdpi.com/1996-1073/15/15/5479ZrSe<sub>3</sub>electronicmechanicalexfoliation energyphonon dispersion
spellingShingle Bohayra Mortazavi
Fazel Shojaei
Mehmet Yagmurcukardes
Meysam Makaremi
Xiaoying Zhuang
A Theoretical Investigation on the Physical Properties of Zirconium Trichalcogenides, ZrS<sub>3</sub>, ZrSe<sub>3</sub> and ZrTe<sub>3</sub> Monolayers
Energies
ZrSe<sub>3</sub>
electronic
mechanical
exfoliation energy
phonon dispersion
title A Theoretical Investigation on the Physical Properties of Zirconium Trichalcogenides, ZrS<sub>3</sub>, ZrSe<sub>3</sub> and ZrTe<sub>3</sub> Monolayers
title_full A Theoretical Investigation on the Physical Properties of Zirconium Trichalcogenides, ZrS<sub>3</sub>, ZrSe<sub>3</sub> and ZrTe<sub>3</sub> Monolayers
title_fullStr A Theoretical Investigation on the Physical Properties of Zirconium Trichalcogenides, ZrS<sub>3</sub>, ZrSe<sub>3</sub> and ZrTe<sub>3</sub> Monolayers
title_full_unstemmed A Theoretical Investigation on the Physical Properties of Zirconium Trichalcogenides, ZrS<sub>3</sub>, ZrSe<sub>3</sub> and ZrTe<sub>3</sub> Monolayers
title_short A Theoretical Investigation on the Physical Properties of Zirconium Trichalcogenides, ZrS<sub>3</sub>, ZrSe<sub>3</sub> and ZrTe<sub>3</sub> Monolayers
title_sort theoretical investigation on the physical properties of zirconium trichalcogenides zrs sub 3 sub zrse sub 3 sub and zrte sub 3 sub monolayers
topic ZrSe<sub>3</sub>
electronic
mechanical
exfoliation energy
phonon dispersion
url https://www.mdpi.com/1996-1073/15/15/5479
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