Hermetic Packaging Based on Cu–Sn and Au–Au Dual Bonding for High-Temperature Graphene Pressure Sensor
A chip-level hermetic package for a high-temperature graphene pressure sensor was investigated. The silicon cap, chip and substrate were stacked by Cu–Sn and Au–Au bonding to enable wide-range measurements while guaranteeing a high hermetic package. Prior to bonding, the sample was treated with Ar (...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-07-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/13/8/1191 |
| _version_ | 1827617753526173696 |
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| author | Junqiang Wang Haikun Zhang Xuwen Chen Mengwei Li |
| author_facet | Junqiang Wang Haikun Zhang Xuwen Chen Mengwei Li |
| author_sort | Junqiang Wang |
| collection | DOAJ |
| description | A chip-level hermetic package for a high-temperature graphene pressure sensor was investigated. The silicon cap, chip and substrate were stacked by Cu–Sn and Au–Au bonding to enable wide-range measurements while guaranteeing a high hermetic package. Prior to bonding, the sample was treated with Ar (5% H<sub>2</sub>) plasma. The Cu–Sn bonding was firstly performed at 260 °C for 15 min with a pressure of 9.9 MPa, and the corresponding process conditions for Au–Au bonding has increased to 300 °C, 20 min and 19.8 MPa respectively. The average shearing strength was 14.3 MPa, and an excellent leak rate of 1.72 × 10<sup>−4</sup> Pa·cm<sup>3</sup>/s was also achieved. After high-temperature storage (HTS) at 350 °C for 10 h, the resistance of graphene decreased slightly because the dual bonding provided oxygen-free environment for graphene. The leakage rate of the device slightly increased to 2.1 × 10<sup>−4</sup> Pa·cm<sup>3</sup>/s, and the average shear strength just decreased to 13.5 MPa. Finally, under the pressure range of 0–100 MPa, the graphene pressure sensor exhibited a high average sensitivity of 3.11 Ω/MPa. In conclusion, the dual bonding that combined Cu–Sn and Au–Au is extremely suitable for hermetic packaging in high-temperature graphene pressure sensors. |
| first_indexed | 2024-03-09T09:52:26Z |
| format | Article |
| id | doaj.art-ed5ec014e8924882a98b178bea298e7b |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-09T09:52:26Z |
| publishDate | 2022-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-ed5ec014e8924882a98b178bea298e7b2023-12-02T00:01:05ZengMDPI AGMicromachines2072-666X2022-07-01138119110.3390/mi13081191Hermetic Packaging Based on Cu–Sn and Au–Au Dual Bonding for High-Temperature Graphene Pressure SensorJunqiang Wang0Haikun Zhang1Xuwen Chen2Mengwei Li3Academy for Advanced Interdisciplinary Research, North University of China, Taiyuan 030051, ChinaAcademy for Advanced Interdisciplinary Research, North University of China, Taiyuan 030051, ChinaAcademy for Advanced Interdisciplinary Research, North University of China, Taiyuan 030051, ChinaAcademy for Advanced Interdisciplinary Research, North University of China, Taiyuan 030051, ChinaA chip-level hermetic package for a high-temperature graphene pressure sensor was investigated. The silicon cap, chip and substrate were stacked by Cu–Sn and Au–Au bonding to enable wide-range measurements while guaranteeing a high hermetic package. Prior to bonding, the sample was treated with Ar (5% H<sub>2</sub>) plasma. The Cu–Sn bonding was firstly performed at 260 °C for 15 min with a pressure of 9.9 MPa, and the corresponding process conditions for Au–Au bonding has increased to 300 °C, 20 min and 19.8 MPa respectively. The average shearing strength was 14.3 MPa, and an excellent leak rate of 1.72 × 10<sup>−4</sup> Pa·cm<sup>3</sup>/s was also achieved. After high-temperature storage (HTS) at 350 °C for 10 h, the resistance of graphene decreased slightly because the dual bonding provided oxygen-free environment for graphene. The leakage rate of the device slightly increased to 2.1 × 10<sup>−4</sup> Pa·cm<sup>3</sup>/s, and the average shear strength just decreased to 13.5 MPa. Finally, under the pressure range of 0–100 MPa, the graphene pressure sensor exhibited a high average sensitivity of 3.11 Ω/MPa. In conclusion, the dual bonding that combined Cu–Sn and Au–Au is extremely suitable for hermetic packaging in high-temperature graphene pressure sensors.https://www.mdpi.com/2072-666X/13/8/1191Cu–Sn bondingAu–Au bondinggraphenehigh-temperature pressure sensor |
| spellingShingle | Junqiang Wang Haikun Zhang Xuwen Chen Mengwei Li Hermetic Packaging Based on Cu–Sn and Au–Au Dual Bonding for High-Temperature Graphene Pressure Sensor Micromachines Cu–Sn bonding Au–Au bonding graphene high-temperature pressure sensor |
| title | Hermetic Packaging Based on Cu–Sn and Au–Au Dual Bonding for High-Temperature Graphene Pressure Sensor |
| title_full | Hermetic Packaging Based on Cu–Sn and Au–Au Dual Bonding for High-Temperature Graphene Pressure Sensor |
| title_fullStr | Hermetic Packaging Based on Cu–Sn and Au–Au Dual Bonding for High-Temperature Graphene Pressure Sensor |
| title_full_unstemmed | Hermetic Packaging Based on Cu–Sn and Au–Au Dual Bonding for High-Temperature Graphene Pressure Sensor |
| title_short | Hermetic Packaging Based on Cu–Sn and Au–Au Dual Bonding for High-Temperature Graphene Pressure Sensor |
| title_sort | hermetic packaging based on cu sn and au au dual bonding for high temperature graphene pressure sensor |
| topic | Cu–Sn bonding Au–Au bonding graphene high-temperature pressure sensor |
| url | https://www.mdpi.com/2072-666X/13/8/1191 |
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