Back contact modification of the optoelectronic device with transition metal dichalcogenide VSe2 film drives solar cell efficiency
VSe2 is with high electrical conductivity and high work function, thus it is beneficial for the carrier transport in the optoelectronic devices. However, the performance and mechanism of its effect on the photoelectronic devices conversion efficiency is still beyond understood. In this work, we fabr...
| Główni autorzy: | , , , , , , , |
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| Format: | Artykuł |
| Język: | English |
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Elsevier
2021-05-01
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| Seria: | Journal of Materiomics |
| Hasła przedmiotowe: | |
| Dostęp online: | http://www.sciencedirect.com/science/article/pii/S2352847820305165 |
| _version_ | 1827841840517218304 |
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| author | Yu Zeng Zhan Shen Xu Wu Dong-Xiao Wang Ye-Liang Wang Ya-Li Sun Li Wu Yi Zhang |
| author_facet | Yu Zeng Zhan Shen Xu Wu Dong-Xiao Wang Ye-Liang Wang Ya-Li Sun Li Wu Yi Zhang |
| author_sort | Yu Zeng |
| collection | DOAJ |
| description | VSe2 is with high electrical conductivity and high work function, thus it is beneficial for the carrier transport in the optoelectronic devices. However, the performance and mechanism of its effect on the photoelectronic devices conversion efficiency is still beyond understood. In this work, we fabricate VSe2 film between back contact and absorber layer Cu2ZnSn(S,Se)4 (CZTSSe) film. We demonstrate that the VSe2 film in back contact region increases solar cell efficiency by 39%. Besides improving the carrier transport in the back contact region, the increasing can also be attributed to the reduction of the decomposition reaction of CZTSSe during the nucleation of CZTSSe as VSe2 fabricated between back contact and absorber layer. The present work not only provides an effective method to improve the performance of the optoelectronic device, but also shows an attractive application of metallic TMDs in optoelectronic device and solar cell energy generation. |
| first_indexed | 2024-03-12T07:59:24Z |
| format | Article |
| id | doaj.art-ed819d0ea23f45d8889d537b07e5d62a |
| institution | Directory Open Access Journal |
| issn | 2352-8478 |
| language | English |
| last_indexed | 2024-03-12T07:59:24Z |
| publishDate | 2021-05-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Journal of Materiomics |
| spelling | doaj.art-ed819d0ea23f45d8889d537b07e5d62a2023-09-02T20:02:17ZengElsevierJournal of Materiomics2352-84782021-05-0173470477Back contact modification of the optoelectronic device with transition metal dichalcogenide VSe2 film drives solar cell efficiencyYu Zeng0Zhan Shen1Xu Wu2Dong-Xiao Wang3Ye-Liang Wang4Ya-Li Sun5Li Wu6Yi Zhang7Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology, And Renewable Energy Conversion and Storage Center, Nankai University, Nankai University, Tianjin, 300350, ChinaTianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology, And Renewable Energy Conversion and Storage Center, Nankai University, Nankai University, Tianjin, 300350, ChinaSchool of Information and Electronics, Beijing Institute of Technology, Beijing, 100081, China; Corresponding author.Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology, And Renewable Energy Conversion and Storage Center, Nankai University, Nankai University, Tianjin, 300350, ChinaSchool of Information and Electronics, Beijing Institute of Technology, Beijing, 100081, ChinaTianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology, And Renewable Energy Conversion and Storage Center, Nankai University, Nankai University, Tianjin, 300350, ChinaKey Laboratory of Weak-Light Nonlinear Photonics, Ministry of Education, School of Physics, Nankai University, Tianjin, 300071, ChinaTianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology, And Renewable Energy Conversion and Storage Center, Nankai University, Nankai University, Tianjin, 300350, China; Corresponding author.VSe2 is with high electrical conductivity and high work function, thus it is beneficial for the carrier transport in the optoelectronic devices. However, the performance and mechanism of its effect on the photoelectronic devices conversion efficiency is still beyond understood. In this work, we fabricate VSe2 film between back contact and absorber layer Cu2ZnSn(S,Se)4 (CZTSSe) film. We demonstrate that the VSe2 film in back contact region increases solar cell efficiency by 39%. Besides improving the carrier transport in the back contact region, the increasing can also be attributed to the reduction of the decomposition reaction of CZTSSe during the nucleation of CZTSSe as VSe2 fabricated between back contact and absorber layer. The present work not only provides an effective method to improve the performance of the optoelectronic device, but also shows an attractive application of metallic TMDs in optoelectronic device and solar cell energy generation.http://www.sciencedirect.com/science/article/pii/S2352847820305165Transition metal dichalcogenidesOptoelectronic deviceVSe2CZTSSe solar cellBack interface |
| spellingShingle | Yu Zeng Zhan Shen Xu Wu Dong-Xiao Wang Ye-Liang Wang Ya-Li Sun Li Wu Yi Zhang Back contact modification of the optoelectronic device with transition metal dichalcogenide VSe2 film drives solar cell efficiency Journal of Materiomics Transition metal dichalcogenides Optoelectronic device VSe2 CZTSSe solar cell Back interface |
| title | Back contact modification of the optoelectronic device with transition metal dichalcogenide VSe2 film drives solar cell efficiency |
| title_full | Back contact modification of the optoelectronic device with transition metal dichalcogenide VSe2 film drives solar cell efficiency |
| title_fullStr | Back contact modification of the optoelectronic device with transition metal dichalcogenide VSe2 film drives solar cell efficiency |
| title_full_unstemmed | Back contact modification of the optoelectronic device with transition metal dichalcogenide VSe2 film drives solar cell efficiency |
| title_short | Back contact modification of the optoelectronic device with transition metal dichalcogenide VSe2 film drives solar cell efficiency |
| title_sort | back contact modification of the optoelectronic device with transition metal dichalcogenide vse2 film drives solar cell efficiency |
| topic | Transition metal dichalcogenides Optoelectronic device VSe2 CZTSSe solar cell Back interface |
| url | http://www.sciencedirect.com/science/article/pii/S2352847820305165 |
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