Back contact modification of the optoelectronic device with transition metal dichalcogenide VSe2 film drives solar cell efficiency

Back contact modification of the optoelectronic device with transition metal dichalcogenide VSe2 film drives solar cell efficiency

VSe2 is with high electrical conductivity and high work function, thus it is beneficial for the carrier transport in the optoelectronic devices. However, the performance and mechanism of its effect on the photoelectronic devices conversion efficiency is still beyond understood. In this work, we fabr...

Полное описание

Библиографические подробности
Главные авторы:	Yu Zeng, Zhan Shen, Xu Wu, Dong-Xiao Wang, Ye-Liang Wang, Ya-Li Sun, Li Wu, Yi Zhang
Формат:	Статья
Язык:	English
Опубликовано:	Elsevier 2021-05-01
Серии:	Journal of Materiomics
Предметы:	Transition metal dichalcogenides Optoelectronic device VSe2 CZTSSe solar cell Back interface
Online-ссылка:	http://www.sciencedirect.com/science/article/pii/S2352847820305165

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